5秒后页面跳转
捷配首页

Datasheet > IRF830STRL
IRF830STRL PDF预览

IRF830STRL

更新时间： 2024-09-21 21:22:07
品牌 Logo 应用领域
威世 - VISHAY 开关晶体管
页数 文件大小 规格书
9页 174K
描述
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

阅读下载

中文翻译

获取价格

IRF830STRL 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：D2PAK包装说明：SMALL OUTLINE, R-PSSO-G2
针数：4Reach Compliance Code：unknown
风险等级：5.04外壳连接：DRAIN
配置：SINGLE最小漏源击穿电压：500 V
最大漏极电流 (Abs) (ID)：4.5 A最大漏极电流 (ID)：4.5 A
最大漏源导通电阻：1.5 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
JESD-609代码：e0元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：74 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：TIN LEAD端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRF830STRL 数据手册

 浏览型号IRF830STRL的Datasheet PDF文件第2页浏览型号IRF830STRL的Datasheet PDF文件第3页浏览型号IRF830STRL的Datasheet PDF文件第4页浏览型号IRF830STRL的Datasheet PDF文件第5页浏览型号IRF830STRL的Datasheet PDF文件第6页浏览型号IRF830STRL的Datasheet PDF文件第7页 
IRF830S, SiHF830S  
Vishay Siliconix  
Power MOSFET  
FEATURES  
PRODUCT SUMMARY  
VDS (V)  
• Halogen-free According to IEC 61249-2-21  
Definition  
• Surface Mount  
• Available in Tape and Reel  
• Dynamic dV/dt Rating  
• Repetitive Avalanche Rated  
• Fast Switching  
500  
RDS(on) ()  
VGS = 10 V  
1.5  
Qg (Max.) (nC)  
38  
5.0  
Q
Q
gs (nC)  
gd (nC)  
22  
• Ease of Paralleling  
• Simple Drive Requirements  
• Compliant to RoHS Directive 2002/95/EC  
Configuration  
Single  
D
DESCRIPTION  
D2PAK (TO-263)  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
The D2PAK (TO-263) is a surface mount power package  
capable of accommodating die size up to HEX-4. It provides  
the highest power capability and the lowest possible  
on-resistance in any existing surface mount package. The  
D2PAK (TO-263) is suitable for high current applications  
because of its low internal connection resistance and can  
dissipate up to 2.0 W in a typical surface mount application.  
G
D
G
S
S
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
D2PAK (TO-263)  
SiHF830S-GE3  
IRF830SPbF  
D2PAK (TO-263)  
SiHF830STRL-GE3a  
IRF830STRLPbFa  
SiHF830STL-E3a  
Lead (Pb)-free and Halogen-free  
Lead (Pb)-free  
SiHF830S-E3  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
500  
20  
V
TC = 25 °C  
C = 100 °C  
4.5  
Continuous Drain Current  
VGS at 10 V  
ID  
T
2.9  
A
Pulsed Drain Currenta  
IDM  
18  
Linear Derating Factor  
0.59  
0.025  
280  
W/°C  
Linear Derating Factor (PCB Mount)e  
Single Pulse Avalanche Energyb  
Avalanche Currenta  
EAS  
IAR  
mJ  
A
4.5  
Repetitive Avalanche Energya  
EAR  
7.4  
mJ  
Maximum Power Dissipation  
Maximum Power Dissipation (PCB Mount)e  
Peak Diode Recovery dV/dtc  
T
C = 25 °C  
74  
PD  
W
V/ns  
°C  
TA = 25 °C  
3.1  
dV/dt  
3.5  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
TJ, Tstg  
- 55 to + 150  
300d  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 50 V, starting TJ = 25 °C, L = 24 mH, Rg = 25 , IAS = 4.5 A (see fig. 12).  
c. ISD 4.5 A, dI/dt 75 A/μs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
e. When mounted on 1" square PCB (FR-4 or G-10 material).  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91064  
S11-1049-Rev. C, 30-May-11  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567...9

中文翻译

下载PDF

IRF830STRL 替代型号

型号 品牌 替代类型 描述 数据表
IRF830STRLPBF VISHAY

类似代替

 暂无描述

与IRF830STRL相关器件

型号 品牌 获取价格 描述 数据表
IRF830STRLPBF VISHAY

获取价格

 		暂无描述
IRF830T MOTOROLA

获取价格

 		4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF830U MOTOROLA

获取价格

 		Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF830U2 MOTOROLA

获取价格

 		4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF830UA MOTOROLA

获取价格

 		Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF830WC MOTOROLA

获取价格

 		Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF831 VISHAY

获取价格

 		Power Field-Effect Transistor, 4.5A I(D), 450V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF831 MOTOROLA

获取价格

 		Power Field-Effect Transistor, 4.5A I(D), 450V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF831 FAIRCHILD

获取价格

 		N-Channel Power MOSFETs, 4.5 A, 450V/500V
IRF831 STMICROELECTRONICS

获取价格

 		4.5A, 450V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN

与IRF830STRL相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证