Datasheet > IRF8313TRPBF

IRF8313TRPBF

更新时间： 2024-11-29 11:09:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	255K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册
替代型号

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IRF8313TRPBF 数据手册

PD - 97145

IRF8313PbF

HEXFET^®Power MOSFET

Applications

l Load Switch

l DC/DC Conversion

V_DSS

30V

R_DS(on)max

15.5m @V = 10V

6.0nC

Benefits

l Low Gate Charge and Low R_DS(on)

l Fully Characterized Avalanche Voltage

and Current

l 20V V_GSMax. Gate Rating

l 100% Tested for R_G

l Lead-Free (Qualified to 260°C Reflow)

l RoHS Compliant (Halogen Free)

SO-8

Description

The IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the

industry standard SO-8 package. The IRF8313PbF has been optimized for parameters that are

critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction

and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC

converters that power the latest generation of processors for notebook and Netcom applications.

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Max.

Units

V_DS

Gate-to-Source Voltage

±20

9.7

8.1

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

@T_A= 25°C

@T_A= 70°C

Power Dissipation

2.0

1.3

Linear Derating Factor

Operating Junction and

0.016

-55 to + 175

W/°C

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

–––

Max.

Units

R_θ

°C/W

–––

62.5

Notes through ꢀ are on page 9

ORDERING INFORMATION:

See detailed ordering and shipping information on the last page of this data sheet.

www.irf.com

11/5/08

12 3 4 5 6 7...10

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IRF8313TRPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRF8313PBF	INFINEON	类似代替	HEXFET Power MOSFET
IRFHS9351TRPBF	INFINEON	功能相似	Small Signal Field-Effect Transistor, 2.3A I(D), 30V, 2-Element, P-Channel, Silicon, Metal

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