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IRF8327SPBF

更新时间： 2024-11-30 01:21:27
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英飞凌 - INFINEON /
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10页 264K
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Ultra Low Package Inductance

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IRF8327SPBF 数据手册

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IRF8327SPbF  
DirectFET® Power MOSFET ‚  
l RoHS Compliant and Halogen Free   
l Low Profile (<0.7 mm)  
Typical values (unless otherwise specified)  
VDSS  
VGS  
RDS(on)  
RDS(on)  
l Dual Sided Cooling Compatible   
l Ultra Low Package Inductance  
30V max ±20V max  
5.1mΩ@ 10V 8.5mΩ@ 4.5V  
l Optimized for High Frequency Switching   
l Ideal for CPU Core DC-DC Converters  
l Optimized for Control FET application  
l Low Conduction and Switching Losses  
l Compatible with existing Surface Mount Techniques   
l 100% Rg tested  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
9.2nC 3.0nC 1.2nC  
19nC  
7.9nC  
1.9V  
DirectFET® ISOMETRIC  
SQ  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SX  
ST  
MQ  
MX  
MT  
MP  
SQ  
Description  
The IRF8327SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the  
lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET® package is compatible  
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering  
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows  
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF8327SPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and  
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of  
processors operating at higher frequencies. The IRF8327SPbF has been optimized for parameters that are critical in synchronous buck  
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.  
Standard Pack  
Form  
Tape and Reel  
Tape and Reel  
Orderable part number  
Package Type  
Note  
Quantity  
4800  
1000  
IRF8327STRPbF  
IRF8327STR1PbF  
DirectFET SQ  
DirectFET SQ  
"TR" suffix  
"TR1" suffix EOL notice # 264  
Absolute Maximum Ratings  
Max.  
Parameter  
Units  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
30  
±20  
14  
11  
60  
110  
62  
11  
V
VDS  
VGS  
ID @ TA = 25°C  
ID @ TA = 70°C  
ID @ TC = 25°C  
IDM  
EAS  
IAR  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Single Pulse Avalanche Energy  
Avalanche Current  
A
mJ  
A
25  
20  
15  
10  
5
14.0  
I = 11A  
I
= 14A  
D
D
12.0  
10.0  
8.0  
V
V
V
= 24V  
= 15V  
= 6.0V  
DS  
DS  
DS  
6.0  
T
= 125°C  
J
4.0  
2.0  
T
= 25°C  
5
J
0
0.0  
0
10  
15  
20  
0
5
10  
15  
20  
25  
Q
Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Notes:  
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 1.1mH, RG = 25Ω, IAS = 11A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
1
www.irf.com © 2014 International Rectifier  
Submit Datasheet Feedback  
May 6, 2014  
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