是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.58 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 510 mJ |
外壳连接: | DRAIN | 配置: | SINGLE |
最小漏源击穿电压: | 500 V | 最大漏极电流 (ID): | 8 A |
最大漏源导通电阻: | 0.85 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 32 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF840-013 | VISHAY |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta | |
IRF840-017 | VISHAY |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta | |
IRF840-017PBF | VISHAY |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta | |
IRF840-024 | VISHAY |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta | |
IRF840-024PBF | VISHAY |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta | |
IRF840-029PBF | VISHAY |
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Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta | |
IRF8401111 | INFINEON |
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TRANSISTORS N-CHANNEL | |
IRF84016 | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta | |
IRF840A | INFINEON |
获取价格 |
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) | |
IRF840A | TRSYS |
获取价格 |
Power MOSFET |