Datasheet > IRF840

IRF840

更新时间： 2024-11-28 22:51:35

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
7页	62K
描述
PowerMOS transistor Avalanche energy rated

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF840 数据手册

Philips Semiconductors

Product specification

PowerMOS transistor

Avalanche energy rated

IRF840

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Repetitive Avalanche Rated

• Fast switching

V_DSS= 500 V

I_D= 8.5 A

• High thermal cycling performance

• Low thermal resistance

R_DS(ON)≤ 0.85 Ω

GENERAL DESCRIPTION

PINNING

SOT78 (TO220AB)

N-channel, enhancement mode

DESCRIPTION

tab

field-effect

power

transistor,

intended for use in off-line switched

mode power supplies, T.V. and

computer monitor power supplies,

d.c.tod.c. converters, motorcontrol

circuits and general purpose

switching applications.

gate

drain

source

drain

tab

1 2 3

The IRF840 is supplied in the

SOT78 (TO220AB) conventional

leaded package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_DSS

V_DGR

V_GS

I_D

Drain-source voltage

T_j= 25 ˚C to 150˚C

500

± 30

8.5

Drain-gate voltage

T_j= 25 ˚C to 150˚C; R_GS= 20 kΩ

Gate-source voltage

Continuous drain current

T_mb= 25 ˚C; V_GS= 10 V

T_mb= 100 ˚C; V_GS= 10 V

T_mb= 25 ˚C

5.4

I_DM

P_D

T_j, T_stg

Pulsed drain current

Total dissipation

Operating junction and

storage temperature range

147

150

T_mb= 25 ˚C

˚C

- 55

AVALANCHE ENERGY LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

E_AS

Non-repetitive avalanche

energy

Unclamped inductive load, I_AS= 7.4 A;

t_p= 0.22 ms; T_jprior to avalanche = 25˚C;

531

_DD≤ 50 V; R_GS= 50 Ω; V_GS= 10 V; refer

to fig:17

E_AR

Repetitive avalanche energy¹I_AR= 8.5 A; t_p= 2.5 µs; T_jprior to

avalanche = 25˚C; R_GS= 50 Ω; V_GS= 10 V;

refer to fig:18

Repetitive and non-repetitive

avalanche current

I_AS, I_AR

8.5

1 pulse width and repetition rate limited by T_jmax.

March 1999

Rev 1.000

12 3 4 5 6 7

中文翻译

下载PDF

与IRF840相关器件

型号	品牌	获取价格	描述	数据表
IRF840_02	STMICROELECTRONICS	获取价格	N-CHANNEL 500V - 0.75ヘ - 8A TO-220 PowerMesh⑩
IRF840-004PBF	VISHAY	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta
IRF840-013	VISHAY	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta
IRF840-017	VISHAY	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta
IRF840-017PBF	VISHAY	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta
IRF840-024	VISHAY	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta
IRF840-024PBF	VISHAY	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta
IRF840-029PBF	VISHAY	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta
IRF8401111	INFINEON	获取价格	TRANSISTORS N-CHANNEL
IRF84016	MOTOROLA	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta