IRF7413ZTR

更新时间： 2024-01-18 08:53:02

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	272K
描述
Control FET for Notebook Processor Power

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技术参数
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IRF7413ZTR 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	SOT	包装说明：	SMALL OUTLINE, R-PDSO-G8
针数：	8	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
风险等级：	5.64	雪崩能效等级（Eas）：	32 mJ
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	30 V
最大漏极电流 (ID)：	13 A	最大漏源导通电阻：	0.01 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	8
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	100 A	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	MATTE TIN
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	30	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	Base Number Matches：	1

IRF7413ZTR 数据手册

IRF7413Z

Power MOSFET Selection for Non-Isolated DC/DC Converters

Synchronous FET

Control FET

The power loss equation for Q2 is approximated

by;

Special attention has been given to the power losses

in the switching elements of the circuit - Q1 and Q2.

Power losses in the high side switch Q1, also called

the Control FET, are impacted by the R_ds(on)of the

MOSFET, but these conduction losses are only about

one half of the total losses.

P = P

+ P + P^*

loss

conduction

drive

output

P = I_rms²× R_ds(on)

loss ( )

Power losses in the control switch Q1 are given

by;

+ Q × V × f

(

)

⎛

⎜

Q_oss

⎞

⎠

P_loss= P_conduction+ P_switching+ P_drive+ P_output

×V × f + Q × V × f

(

)

⎝ 2

This can be expanded and approximated by;

*dissipated primarily in Q1.

= I ²× R_ds(on)

(

)

loss

rms

For the synchronous MOSFET Q2, R_ds(on)is an im-

portant characteristic; however, once again the im-

portance of gate charge must not be overlooked since

it impacts three critical areas. Under light load the

MOSFET must still be turned on and off by the con-

trol IC so the gate drive losses become much more

significant. Secondly, the output charge Q_ossand re-

verse recovery charge Q_rrboth generate losses that

are transfered to Q1 and increase the dissipation in

that device. Thirdly, gate charge will impact the

MOSFETs’ susceptibility to Cdv/dt turn on.

⎛

Q_gd

i_g

⎞

Q_gs2

i_g

⎞

⎟

⎜

⎟

⎜

+ I ×

× V × f + I ×

× V × f

⎝

⎠

⎝

⎠

+ Q × V × f

(

)

⎛ Q_oss

⎞

⎠

×V × f

⎝

This simplified loss equation includes the terms Q_gs2

The drain of Q2 is connected to the switching node

of the converter and therefore sees transitions be-

tween ground and V_in. As Q1 turns on and off there is

a rate of change of drain voltage dV/dt which is ca-

pacitively coupled to the gate of Q2 and can induce

a voltage spike on the gate that is sufficient to turn

the MOSFET on, resulting in shoot-through current .

The ratio of Q_gd/Q_gs1must be minimized to reduce the

potential for Cdv/dt turn on.

and Q_osswhich are new to Power MOSFET data sheets.

Q_gs2is a sub element of traditional gate-source

charge that is included in all MOSFET data sheets.

The importance of splitting this gate-source charge

into two sub elements, Q_gs1and Q_gs2, can be seen from

Fig 16.

Q_gs2indicates the charge that must be supplied by

the gate driver between the time that the threshold

voltage has been reached and the time the drain cur-

rent rises to I_dmaxat which time the drain voltage be-

gins to change. Minimizing Q_gs2is a critical factor in

reducing switching losses in Q1.

Q_ossis the charge that must be supplied to the out-

put capacitance of the MOSFET during every switch-

ing cycle. Figure A shows how Q_ossis formed by the

parallel combination of the voltage dependant (non-

linear) capacitances C_dsand C_dgwhen multiplied by

the power supply input buss voltage.

Figure A: Q_ossCharacteristic

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IRF7413ZUTRPBF	INFINEON	Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta	获取价格
IRF7416	INFINEON	Power MOSFET(Vdss=-30V, Rds(on)=0.02ohm)	获取价格
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IRF7416PBF-1	INFINEON	Power Field-Effect Transistor	获取价格

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