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IRF550AJ69Z PDF预览

IRF550AJ69Z

更新时间: 2024-01-23 08:25:12
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关脉冲晶体管
页数 文件大小 规格书
7页 263K
描述
Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN

IRF550AJ69Z 技术参数

生命周期:Obsolete零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.76雪崩能效等级(Eas):640 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):40 A最大漏源导通电阻:0.04 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):160 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF550AJ69Z 数据手册

 浏览型号IRF550AJ69Z的Datasheet PDF文件第2页浏览型号IRF550AJ69Z的Datasheet PDF文件第3页浏览型号IRF550AJ69Z的Datasheet PDF文件第4页浏览型号IRF550AJ69Z的Datasheet PDF文件第5页浏览型号IRF550AJ69Z的Datasheet PDF文件第6页浏览型号IRF550AJ69Z的Datasheet PDF文件第7页 
IRF550A  
Advanced Power MOSFET  
FEATURES  
BVDSS = 100 V  
Avalanche Rugged Technology  
Rugged Gate Oxide Technology  
Lower Input Capacitance  
W
RDS(on) = 0.04  
ID = 40 A  
Improved Gate Charge  
Extended Safe Operating Area  
TO-220  
O
175 C Operating Temperature  
m
Lower Leakage Current : 10 A (Max.) @ VDS = 100V  
W
Lower RDS(ON) : 0.032  
(Typ.)  
1
2
3
1.Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Value  
Units  
VDSS  
Drain-to-Source Voltage  
V
100  
40  
O
Continuous Drain Current (TC=25  
)
C
ID  
A
O
Continuous Drain Current (TC=100  
Drain Current-Pulsed  
)
C
28.3  
160  
+
IDM  
VGS  
EAS  
IAR  
1
A
V
O
Gate-to-Source Voltage  
_
20  
2
O
Single Pulsed Avalanche Energy  
Avalanche Current  
640  
40  
mJ  
A
1
O
EAR  
dv/dt  
Repetitive Avalanche Energy  
1
mJ  
V/ns  
16.7  
6.5  
O
3
Peak Diode Recovery dv/dt  
O
O
Total Power Dissipation (TC=25  
Linear Derating Factor  
)
W
167  
1.11  
C
PD  
TJ , TSTG  
TL  
O
W/  
C
Operating Junction and  
- 55 to +175  
300  
Storage Temperature Range  
O
C
Maximum Lead Temp. for Soldering  
Purposes, 1/8” from case for 5-seconds  
Thermal Resistance  
Symbol  
Characteristic  
Junction-to-Case  
Case-to-Sink  
Typ.  
Max.  
0.9  
Units  
Rq  
--  
0.5  
--  
JC  
O
R q  
--  
C
/W  
CS  
Rq  
Junction-to-Ambient  
62.5  
JA  
Rev. B  
©1999 Fairchild Semiconductor Corporation  

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