生命周期: | Obsolete | 零件包装代码: | SFM |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.76 | 雪崩能效等级(Eas): | 640 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 40 A | 最大漏源导通电阻: | 0.04 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 160 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF5800 | INFINEON |
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Power MOSFET(Vdss=-30V, Rds(on)=0.085ohm) |
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IRF5800_03 | INFINEON |
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Ultra Low On-Resistance, P-Channel MOSFET |
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IRF5800PBF | INFINEON |
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HEXFET Power MOSFET |
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IRF5800TRPBF | INFINEON |
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Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET, |
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IRF5801 | INFINEON |
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Power MOSFET(Vdss=200V, Rds(on)max=2.2ohm, Id=0.6A) |
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IRF5801PBF | INFINEON |
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Power Field-Effect Transistor, 0.6A I(D), 200V, 2.2ohm, 1-Element, N-Channel, Silicon, Met |
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IRF5801PBF-1 | INFINEON |
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Industry-standard pinout TSOP-6 Package |
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IRF5801PBF-1_15 | INFINEON |
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HEXFET Power MOSFET |
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IRF5801TRPBF | INFINEON |
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High frequency DC-DC converters |
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IRF5801TRPbF-1 | INFINEON |
获取价格 |
Industry-standard pinout TSOP-6 Package |
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