Datasheet > IRF510

IRF510

更新时间： 2024-10-29 22:51:35

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
7页	73K
描述
5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET

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IRF510 数据手册

IRF510

Data Sheet

November 1999

File Number 1573.4

5.6A, 100V, 0.540 Ohm, N-Channel Power

MOSFET

Features

• 5.6A, 100V

• r = 0.540Ω

This N-Channel enhancement mode silicon gate power ﬁeld

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a speciﬁed level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching convertors, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly developmental type TA17441.

Ordering Information

Symbol

PART NUMBER

PACKAGE

BRAND

IRF510

TO-220AB

NOTE: When ordering, include the entire part number.

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7

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IRF510 替代型号

型号	品牌	替代类型	描述	数据表
IRF510PBF	VISHAY	功能相似	Power MOSFET
IRF540N	INFINEON	功能相似	Power MOSFET(Vdss=100V, Rds(on)=44mohm, Id=33A)

与IRF510相关器件

型号	品牌	获取价格	描述	数据表
IRF510-011PBF	VISHAY	获取价格	Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Me
IRF510-513	FAIRCHILD	获取价格	N-Channel Power MOSFETs, 5.5 A, 60-100V
IRF510A	FAIRCHILD	获取价格	Advanced Power MOSFET
IRF510A	MOTOROLA	获取价格	4A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF510A16A	MOTOROLA	获取价格	4A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF510AF	MOTOROLA	获取价格	Power Field-Effect Transistor, 4A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal
IRF510AJ	MOTOROLA	获取价格	4A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF510AJ69Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 5.6A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
IRF510C	MOTOROLA	获取价格	Power Field-Effect Transistor, 4A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal
IRF510F	INFINEON	获取价格	Power Field-Effect Transistor, 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide S