IRF510S, SiHF510S
www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
• Surface-mount
D
D2PAK (TO-263)
• Available in tape and reel
• Dynamic dv/dt rating
• Repetitive avalanche rated
• 175 °C operating temperature
• Fast switching
Available
Available
G
• Ease of paralleling
D
G
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
S
S
N-Channel MOSFET
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
PRODUCT SUMMARY
VDS (V)
100
DESCRIPTION
RDS(on) ()
VGS = 10 V
0.54
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
Qg max. (nC)
8.3
2.3
Qgs (nC)
gd (nC)
Q
3.8
The D2PAK (TO-263) is a surface-mount power package
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface-mount
package. The D2PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical
surface-mount application.
Configuration
Single
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
Lead (Pb)-free
D2PAK (TO-263)
SiHF510S-GE3
IRF510SPbF
D2PAK (TO-263)
SiHF510STRL-GE3 a
IRF510STRLPbF a
D2PAK (TO-263)
SiHF510STRR-GE3 a
IRF510STRRPbF a
Note
a. See device orientation
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
SYMBOL
VDS
LIMIT
100
20
UNIT
V
VGS
TC = 25 °C
C = 100 °C
5.6
4.0
20
Continuous drain current
V
GS at 10 V
ID
T
A
Pulsed drain current a
IDM
Linear derating factor
0.29
0.025
75
W/°C
Linear derating factor (PCB mount) e
Single pulse avalanche energy b
Avalanche current a
EAS
IAR
mJ
A
5.6
Repetitive avalanche energy a
Maximum power dissipation
Maximum power dissipation (PCB mount) e
Peak diode recovery dv/dt c
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d
EAR
4.3
43
3.7
5.5
mJ
TC = 25 °C
TA = 25 °C
PD
W
V/ns
°C
dv/dt
TJ, Tstg
-55 to +175
300
For 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 25 V, starting TJ = 25 °C, L = 4.8 mH, Rg = 25 , IAS = 5.6 A (see fig. 12)
c. ISD 5.6 A, di/dt 75 A/μs, VDD VDS, TJ 175 °C
d. 1.6 mm from case
e. When mounted on 1" square PCB (FR-4 or G-10 material)
S20-0683-Rev. E, 07-Sep-2020
Document Number: 91016
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000