是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.07 | 外壳连接: | DRAIN |
配置: | SINGLE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (Abs) (ID): | 4 A | 最大漏极电流 (ID): | 5.6 A |
最大漏源导通电阻: | 0.54 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 20 W | 最大脉冲漏极电流 (IDM): | 20 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF510-011PBF | VISHAY |
获取价格 |
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Me | |
IRF510-513 | FAIRCHILD |
获取价格 |
N-Channel Power MOSFETs, 5.5 A, 60-100V | |
IRF510A | FAIRCHILD |
获取价格 |
Advanced Power MOSFET | |
IRF510A | MOTOROLA |
获取价格 |
4A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
IRF510A16A | MOTOROLA |
获取价格 |
4A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
IRF510AF | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 4A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal | |
IRF510AJ | MOTOROLA |
获取价格 |
4A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
IRF510AJ69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Met | |
IRF510C | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 4A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal | |
IRF510F | INFINEON |
获取价格 |
Power Field-Effect Transistor, 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide S |