Datasheet > IRF4N60

IRF4N60

更新时间： 2024-10-30 05:39:27

品牌	Logo	应用领域
SUNTAC		/
页数	文件大小	规格书
4页	153K
描述
POWER MOSFET

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中文翻译

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数据手册

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IRF4N60 数据手册

IRF4N60

POWER MOSFET

GENERAL DESCRIPTION

FEATURES

This advanced high voltage MOSFET is designed to

withstand high energy in the avalanche mode and switch

efficiently. This new high energy device also offers a

'ꢀ Higher Current Rating

'ꢀ Lower Rds(on)

'ꢀ Lower Capacitances

drain-to-source diode with fast recovery time. Designed for 'ꢀ Lower Total Gate Charge

high voltage, high speed switching applications such as

power supplies, converters, power motor controls and

bridge circuits.

'ꢀ Tighter VSD Specifications

'ꢀ Avalanche Energy Specified

PIN CONFIGURATION

SYMBOL

TO-220/TO-220FP

Top View

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

Rating

Drain to Current ꢀ Continuous

Symbol

I_D

Value

4.0

Unit

ꢀ Pulsed

I_DM

Gate-to-Source Voltage ꢀ Continue

ꢀ Non-repetitive

V_GS

V_GSM

P_D

Total Power Dissipation

TO-220

TO-220FP

Operating and Storage Temperature Range

Single Pulse Drain-to-Source Avalanche Energy ꢀ T_J= 25R

(V_DD= 100V, V_GS= 10V, I_L= 4A, L = 10mH, R_G= 25ꢀ)

Thermal Resistance ꢀ Junction to Case

ꢀ Junction to Ambient

T_J, T_STG

E_AS

-55 to 150

1.70

R/W

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds

T_L

300

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