5秒后页面跳转
IRF1104LPBF PDF预览

IRF1104LPBF

更新时间: 2024-09-12 21:53:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
10页 263K
描述
HEXFET Power MOSFET

IRF1104LPBF 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:LEAD FREE, PLASTIC, TO-262, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:5.15Is Samacsys:N
其他特性:AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE雪崩能效等级(Eas):350 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (Abs) (ID):100 A
最大漏极电流 (ID):100 A最大漏源导通电阻:0.009 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):170 W最大脉冲漏极电流 (IDM):400 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRF1104LPBF 数据手册

 浏览型号IRF1104LPBF的Datasheet PDF文件第2页浏览型号IRF1104LPBF的Datasheet PDF文件第3页浏览型号IRF1104LPBF的Datasheet PDF文件第4页浏览型号IRF1104LPBF的Datasheet PDF文件第5页浏览型号IRF1104LPBF的Datasheet PDF文件第6页浏览型号IRF1104LPBF的Datasheet PDF文件第7页 
PD - 95526  
IRF1104S/LPbF  
HEXFET® Power MOSFET  
l Advanced Process Technology  
l Ultra Low On-Resistance  
l Surface Mount (IRF1104S)  
l Low-profile through-hole (IRF1104L)  
l 175°C Operating Temperature  
l Fast Switching  
D
VDSS = 40V  
RDS(on) = 0.009Ω  
G
l Fully Avalanche Rated  
l Lead-Free  
ID = 100A  
S
Description  
FifthGenerationHEXFETsfromInternationalRectifierutilize  
advancedprocessingtechniquestoachieveextremelylow  
on-resistancepersiliconarea. Thisbenefit,combinedwith  
thefastswitchingspeedandruggedizeddevicedesignthat  
HEXFETPowerMOSFETsarewellknownfor,providesthe  
designerwithanextremelyefficientandreliabledevicefor  
useinawidevarietyofapplications.  
The D2Pak is a surface mount power package capable of  
accommodating die sizes up to HEX-4. It provides the  
highestpowercapabilityandthelowestpossibleon-resistance  
in any existing surface mount package. The D2Pak is  
suitable for high current applications because of its low  
internalconnectionresistanceandcandissipateupto2.0W  
inatypicalsurfacemountapplication.  
2
TO-262  
D
Pak  
Thethrough-holeversion(IRF1104L)isavailableforlow-  
profileapplications.  
Absolute Maximum Ratings  
Parameter  
Max.  
100†  
71†  
400  
2.4  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10Vꢀ  
Continuous Drain Current, VGS @ 10Vꢀ  
Pulsed Drain Current ꢀ  
Power Dissipation  
A
PD @TA = 25°C  
PD @TC = 25°C  
W
W
Power Dissipation  
170  
1.1  
Linear Derating Factor  
W/°C  
V
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
±20  
350  
60  
Single Pulse Avalanche Energy‚ꢀ  
Avalanche Current  
mJ  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒꢀ  
Operating Junction and  
17  
mJ  
V/ns  
5.0  
-55 to + 175  
300 (1.6mm from case )  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
Thermal Resistance  
Parameter  
Junction-to-Case  
Junction-to-Ambient(PCB Mounted,steady-state)**  
Typ.  
–––  
–––  
Max.  
0.9  
62  
Units  
RθJC  
°C/W  
RθJA  
www.irf.com  
1
7/20/04  

与IRF1104LPBF相关器件

型号 品牌 获取价格 描述 数据表
IRF1104PBF INFINEON

获取价格

HEXFET POWER MOSFET ( VDSS = 40V , RDS(on) =
IRF1104S INFINEON

获取价格

HEXFET Power MOSFET
IRF1104SPBF INFINEON

获取价格

HEXFET Power MOSFET
IRF1104STRLPBF INFINEON

获取价格

Power Field-Effect Transistor, 100A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Me
IRF1104STRR INFINEON

获取价格

Power Field-Effect Transistor, 100A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Me
IRF1104STRRPBF INFINEON

获取价格

Power Field-Effect Transistor, 100A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Me
IRF-110UH+/-10% VISHAY

获取价格

General Fixed Inductor, 1 ELEMENT, 10 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LE
IRF-110UH+-10%EBE2 VISHAY

获取价格

General Purpose Inductor, 10uH, 10%, Ferrite-Core,
IRF-110UH+-10%EVE2 VISHAY

获取价格

General Purpose Inductor, 10uH, 10%, Ferrite-Core,
IRF-110UH+-5%B08 VISHAY

获取价格

General Purpose Inductor, 10uH, 5%, Ferrite-Core,