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IRF1104STRRPBF

更新时间： 2024-09-13 13:08:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	102K
描述
Power Field-Effect Transistor, 100A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

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IRF1104STRRPBF 数据手册

PD- 9.1724A

IRF1104

PRELIMINARY

HEXFET^®Power MOSFET

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

V_DSS= 40V

l 175°C Operating Temperature

l Fast Switching

R_DS(on)= 0.009Ω

l Fully Avalanche Rated

I_D= 100Aꢀ

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced

processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device

design that HEXFET Power MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device for use in a wide variety

of applications.

The TO-220 package is universally preferred for all commercial-industrial

applications at power dissipation levels to approximately 50 watts. The low

thermal resistance and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

100 ꢀ

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

400

P_D@T_C= 25°C

PowerDissipation

170

W/°C

LinearDeratingFactor

1.11

V_GS

E_AS

I_AR

Gate-to-SourceVoltage

± 20

350

Single Pulse Avalanche Energy

AvalancheCurrent

E_AR

dv/dt

T_J

RepetitiveAvalancheEnergy

Peak Diode Recovery dv/dt

OperatingJunctionand

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

0.90

Units

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

www.irf.com

4/24/98

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