Datasheet > IRF1104STRLPBF

IRF1104STRLPBF

更新时间： 2024-09-13 21:08:47

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
10页	259K
描述
Power Field-Effect Transistor, 100A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

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IRF1104STRLPBF 数据手册

PD - 95526

IRF1104S/LPbF

HEXFET^®Power MOSFET

l Advanced Process Technology

l Ultra Low On-Resistance

l Surface Mount (IRF1104S)

l Low-profile through-hole (IRF1104L)

l 175°C Operating Temperature

l Fast Switching

V_DSS= 40V

R_DS(on)= 0.009Ω

l Fully Avalanche Rated

l Lead-Free

I_D= 100Aꢀ

Description

FifthGenerationHEXFETsfromInternationalRectifierutilize

advancedprocessingtechniquestoachieveextremelylow

on-resistancepersiliconarea. Thisbenefit,combinedwith

thefastswitchingspeedandruggedizeddevicedesignthat

HEXFETPowerMOSFETsarewellknownfor,providesthe

designerwithanextremelyefficientandreliabledevicefor

useinawidevarietyofapplications.

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highestpowercapabilityandthelowestpossibleon-resistance

in any existing surface mount package. The D²Pak is

suitable for high current applications because of its low

internalconnectionresistanceandcandissipateupto2.0W

inatypicalsurfacemountapplication.

TO-262

Pak

Thethrough-holeversion(IRF1104L)isavailableforlow-

profileapplications.

Absolute Maximum Ratings

Parameter

Max.

100

400

2.4

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10Vꢀ

Pulsed Drain Current ꢀ

Power Dissipation

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

170

1.1

Linear Derating Factor

W/°C

V_GS

E_AS

I_AR

Gate-to-Source Voltage

±20

350

Single Pulse Avalanche Energyꢀ

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

V/ns

5.0

-55 to + 175

300 (1.6mm from case )

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

Thermal Resistance

Parameter

Junction-to-Case

Junction-to-Ambient(PCB Mounted,steady-state)**

Typ.

–––

Max.

0.9

Units

R_θJC

°C/W

R_θJA

www.irf.com

7/20/04

12 3 4 5 6 7...10

中文翻译

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与IRF1104STRLPBF相关器件

型号	品牌	获取价格	描述	数据表
IRF1104STRR	INFINEON	获取价格	Power Field-Effect Transistor, 100A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Me
IRF1104STRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 100A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Me
IRF-110UH+/-10%	VISHAY	获取价格	General Fixed Inductor, 1 ELEMENT, 10 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LE
IRF-110UH+-10%EBE2	VISHAY	获取价格	General Purpose Inductor, 10uH, 10%, Ferrite-Core,
IRF-110UH+-10%EVE2	VISHAY	获取价格	General Purpose Inductor, 10uH, 10%, Ferrite-Core,
IRF-110UH+-5%B08	VISHAY	获取价格	General Purpose Inductor, 10uH, 5%, Ferrite-Core,
IRF-110UH+-5%ESE2	VISHAY	获取价格	General Purpose Inductor, 10uH, 5%, Ferrite-Core,
IRF-110UH+-5%EVE2	VISHAY	获取价格	General Purpose Inductor, 10uH, 5%, Ferrite-Core,
IRF-110UH+-5%R36	VISHAY	获取价格	General Purpose Inductor, 10uH, 5%, Ferrite-Core,
IRF-110UH+-5%RJ1	VISHAY	获取价格	General Purpose Inductor, 10uH, 5%, Ferrite-Core,

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