是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 1 week | 风险等级: | 1.69 |
雪崩能效等级(Eas): | 78 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 600 V |
最大漏极电流 (ID): | 23 A | 最大漏源导通电阻: | 0.102 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-F3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最低工作温度: | -55 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 66 A |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | FLAT | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPT60R105CFD7 | INFINEON |
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600V CoolMOS? CFD7?是英飞凌推出的新型高压超结 MOSFET 技术,具有 | |
IPT60R125CFD7 | INFINEON |
获取价格 |
600V CoolMOS? CFD7 是英飞凌推出的新型高压超结 MOSFET 技术,具有 | |
IPT60R125G7 | INFINEON |
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Power Field-Effect Transistor, | |
IPT60R125G7XTMA1 | INFINEON |
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Power Field-Effect Transistor, 20A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Me | |
IPT60R145CFD7 | INFINEON |
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600V CoolMOS™ CFD7 是英飞凌推出的新型高压超结 MOSFET 技术,具有 | |
IPT60R150G7 | INFINEON |
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CoolMOS? C7 Gold 超结 MOSFET 系列(G7)首次将改进型 600V | |
IPT60R150G7XTMA1 | INFINEON |
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Power Field-Effect Transistor, 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IPT60R180CM8 | INFINEON |
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The 600 V CoolMOS? 8 SJ MOSFETs series is the successor to the 600 V CoolMOS? 7 MOSFET fam | |
IPT60T022S7 | INFINEON |
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The CoolMOS? S7T with embedded temperature sensor increases junction temperature sensing a | |
IPT60T040S7 | INFINEON |
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The CoolMOS? S7T with embedded temperature sensor increases junction temperature sensing a |