Datasheet > IPT60T022S7

IPT60T022S7

更新时间： 2025-07-19 15:19:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
16页	1569K
描述
The CoolMOS? S7T with embedded temperature sensor increases junction temperature sensing accuracy

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中文翻译

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IPT60T022S7 数据手册

IPT60T022S7

MOSFET

PG-HSOF-8

600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice

IPT60T022S7ꢀenablesꢀtheꢀbestꢀpriceꢀperformanceꢀforꢀlow-frequency

switchingꢀapplications.ꢀCoolMOS™ꢀS7ꢀboastsꢀtheꢀlowestꢀRdsonꢀvaluesꢀfor

anꢀHVꢀSJꢀMOSFET,ꢀwithꢀaꢀdistinctiveꢀincreaseꢀinꢀenergyꢀefficiency.ꢀThe

embeddedꢀTemperatureꢀsensorꢀincreasesꢀjunctionꢀtemperatureꢀsensing

accuracyꢀandꢀrobustnessꢀwhileꢀkeepingꢀanꢀeasyꢀandꢀseamless

implementation.ꢀCoolMOS™ꢀS7ꢀisꢀoptimizedꢀforꢀ“staticꢀswitching”ꢀandꢀhigh

currentꢀapplications.ꢀItꢀisꢀanꢀidealꢀfitꢀforꢀsolid-stateꢀrelay,ꢀcircuitꢀbreaker

designs,ꢀandꢀlineꢀrectificationꢀinꢀSMPSꢀandꢀinverterꢀtopologies.ꢀTheꢀnew

temperatureꢀsensorꢀenhancesꢀS7ꢀfeatures,ꢀallowingꢀtheꢀbestꢀpossible

utilizationꢀofꢀtheꢀpowerꢀtransistor.

Tab

Features

Drain

Tab

•ꢀCoolMOS™ꢀS7ꢀtechnologyꢀenablesꢀlowestꢀꢀR_DS(on)ꢀinꢀtheꢀsmallest

footprint

•ꢀOptimizedꢀpriceꢀperformanceꢀinꢀlow-frequencyꢀswitchingꢀapplications

•ꢀHighꢀpulseꢀcurrentꢀcapability

•ꢀSeamlessꢀdiagnosticsꢀatꢀtheꢀlowestꢀsystem

•ꢀTemperatureꢀsenseꢀfeatureꢀforꢀprotectionꢀandꢀoptimizedꢀthermalꢀdevice

utilizationꢀcost

Gate

Pin 1

TS^*2

Pin 2

Source

Pin 3-8

*1: Internal body diode

*2: Temperature sensor

Benefits

•ꢀMinimizedꢀconductionꢀlossesꢀ(eliminate/reduceꢀheatꢀsink)

•ꢀIncreasedꢀsystemꢀperformance

•ꢀMoreꢀcompactꢀandꢀmoreꢀstraightforwardꢀdesign

•ꢀLowerꢀBOMꢀor/andꢀTCOꢀoverꢀaꢀprolongedꢀlifetime

•ꢀReductionꢀofꢀexternalꢀsensingꢀelements

Comparedꢀtoꢀelectromechanicalꢀdevices:

•ꢀFasterꢀswitchingꢀtimes

•ꢀMoreꢀreliabilityꢀandꢀlongerꢀsystemꢀlifetime

•ꢀShockꢀ&ꢀVibrationꢀresistance

•ꢀNoꢀcontactꢀarcingꢀorꢀbouncing

Potentialꢀapplications

•ꢀSolidꢀstateꢀrelaysꢀandꢀcircuitꢀbreakers

•ꢀLineꢀrectificationꢀinꢀhighꢀpower/performanceꢀapplicationsꢀe.g.ꢀComputing,

Telecom,ꢀUPSꢀandꢀSolar

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

R_DS(on),max

Q_g,typ

Value

Unit

mΩ

150

0.82

371

V_SD

Pulsed I_SD, I_DS

ESD class (HBM)

JEDEC JS-001

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

60I022S7

RelatedꢀLinks

IPT60T022S7

PG-HSOF-8

see Appendix A

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2023-09-25

12 3 4 5 6 7...16

中文翻译

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与IPT60T022S7相关器件

型号	品牌	获取价格	描述	数据表
IPT60T040S7	INFINEON	获取价格	The CoolMOS? S7T with embedded temperature sensor increases junction temperature sensing a
IPT60T065S7	INFINEON	获取价格	The CoolMOS? S7T with embedded temperature sensor increases junction temperature sensing a
IPT630	ETC	获取价格	TRIAC\|600V V(DRM)\|30A I(T)RMS\|PRESS-19
IPT640	ETC	获取价格	TRIAC\|600V V(DRM)\|40A I(T)RMS\|PRESS-19
IPT65R018CM8	INFINEON	获取价格	The 650 V CoolMOS™ 8 SJ MOSFETs series is the
IPT65R025CM8	INFINEON	获取价格	The 650 V CoolMOS™ 8 SJ MOSFETs series is the
IPT65R033G7XTMA1	INFINEON	获取价格	Power Field-Effect Transistor,
IPT65R040CFD7	INFINEON	获取价格	Infineon’s 650 V CoolMOS™ CFD7 superjunction
IPT65R040CM8	INFINEON	获取价格	The 650 V CoolMOS™ 8 SJ MOSFETs series is the
IPT65R060CFD7	INFINEON	获取价格	Infineon’s?650 V CoolMOS? CFD7?superjunction

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