Datasheet > IPTA60R180CM8

IPTA60R180CM8

更新时间： 2024-10-15 17:15:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	1236K
描述
The 600 V CoolMOS? 8 SJ MOSFETs series is the successor to the 600 V CoolMOS? 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7.

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中文翻译

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IPTA60R180CM8 数据手册

IPTA60R180CM8

MOSFET

PG-LHSOF-4

600VꢀCoolMOSªꢀCM8ꢀPowerꢀTransistor

TheꢀCoolMOS™ꢀ8thꢀgenerationꢀplatformꢀisꢀaꢀrevolutionaryꢀtechnologyꢀfor

highꢀvoltageꢀpowerꢀMOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunction

(SJ)ꢀprincipleꢀandꢀpioneeredꢀbyꢀInfineonꢀTechnologies.ꢀTheꢀ600V

CoolMOS™ꢀCM8ꢀseriesꢀisꢀtheꢀsuccessorꢀtoꢀtheꢀCoolMOS™ꢀ7.

ItꢀcombinesꢀtheꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSJꢀMOSFETꢀwithꢀexcellent

easeꢀofꢀuse,ꢀe.gꢀlowꢀringingꢀtendency,ꢀimplementedꢀfastꢀbodyꢀdiodeꢀ(CFD)

forꢀallꢀproductsꢀwithꢀoutstandingꢀrobustnessꢀagainstꢀhardꢀcommutationꢀand

excellentꢀESDꢀcapability.ꢀFurthermore,ꢀextremelyꢀlowꢀswitchingꢀand

conductionꢀlossesꢀofꢀCM8,ꢀmakeꢀswitchingꢀapplicationsꢀevenꢀmore

efficient.

Tab

Features

Drain

Pin 5

•ꢀSuitableꢀforꢀhardꢀandꢀsoftꢀswitchingꢀtopologiesꢀthanksꢀtoꢀan

ꢀꢁꢀoutstandingꢀcommutationꢀruggedness

•ꢀSignificantꢀreductionꢀofꢀswitchingꢀandꢀconductionꢀlosses

•ꢀBestꢀinꢀclassꢀR_DS(on)ꢀperꢀpackageꢀproductsꢀenabledꢀbyꢀultraꢀlowꢀR_DS(on)*A

Gate

Pin 1

Driver

Source

Pin 2

Source

Pin 3,4

*1: Internal body diode

*2: Integrated ESD diode

Benefits

•ꢀEaseꢀofꢀuseꢀandꢀfastꢀdesign-inꢀthroughꢀlowꢀringingꢀtendencyꢀandꢀusage

ꢀꢁꢀacrossꢀPFCꢀandꢀPWMꢀstages

•ꢀSimplifiedꢀthermalꢀmanagementꢀthanksꢀtoꢀourꢀadvancedꢀdieꢀattach

ꢀꢁꢀtechnique

•ꢀIncreasedꢀpowerꢀdensityꢀsolutionsꢀenabledꢀbyꢀusingꢀproductsꢀwith

ꢀꢁꢀsmallerꢀfootprintꢀandꢀhigherꢀmanufacturingꢀqualityꢀdueꢀstateꢀofꢀtheꢀart

ꢀꢁꢀESDꢀprotection

•ꢀSuitableꢀforꢀaꢀwideꢀvarietyꢀofꢀapplicationsꢀandꢀpowerꢀranges

Potentialꢀapplications

•ꢀPowerꢀsuppliesꢀandꢀconverters

•ꢀPFCꢀstagesꢀ&ꢀLLCꢀresonantꢀconverters

•ꢀHighꢀefficiencyꢀswitchingꢀapplications

•ꢀe.g.ꢀServer,ꢀTelecom,ꢀEVꢀCharging,ꢀUPS

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate

orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

V_DS@ T_j,max

R_DS(on),max

Value

650

180

Unit

mΩ

Q_g,typ

I_D,pulse

E_oss@ 400V

Body diode di_F/dt

ESD class (HBM)

2.4

µJ

1300

A/µs

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

IPTA60R180CM8

PG-LHSOF-4

60R180C8

see Appendix A

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2024-03-21

12 3 4 5 6 7...14

中文翻译

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与IPTA60R180CM8相关器件

型号	品牌	获取价格	描述	数据表
IPTC007N06NM5	INFINEON	获取价格	IPTC007N06NM5 is part of the OptiMOS™ 5 power
IPTC011N08NM5	INFINEON	获取价格	IPTC011N08NM5 属于TOLT 封装 OptiMOS™ 5 功率 MOSFET
IPTC012N06NM5	INFINEON	获取价格	IPTC012N06NM5 is part of the OptiMOS™ 5 power
IPTC014N08NM5	INFINEON	获取价格	IPTC014N08NM5 属于采用 TOLT 封装的 OptiMOS? 5 功率 MOS
IPTC014N10NM5	INFINEON	获取价格	IPTC014N10NM5 属于TOLT 封装 OptiMOS™ 5 功率 MOSFET
IPTC017N12NM6	INFINEON	获取价格	This is a normal level 120 V MOSFET in TO-Lea
IPTC019N10NM5	INFINEON	获取价格	IPTC019N10NM5 属于采用 TOLT 封装的 OptiMOS? 5 功率 MOS
IPTC020N13NM6	INFINEON	获取价格	OptiMOS? 6?135 V targets high-power motor-drive applications such as LEVs, e-forklifts, po
IPTC026N12NM6	INFINEON	获取价格	This is a normal level 120 V MOSFET in TOLT?p
IPTC039N15NM5	INFINEON	获取价格	IPTC039N15NM5 属于TOLT 封装 OptiMOS™ 5 功率 MOSFET

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