Datasheet > IPTC017N12NM6

IPTC017N12NM6

更新时间： 2024-10-31 11:14:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	1383K
描述
This is a normal level 120 V MOSFET in TO-Leaded top-side cooling (TOLT) packaging with 1.7 mOhm on-resistance. IPTC017N12NM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.

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IPTC017N12NM6 数据手册

IPTC017N12NM6

MOSFET

OptiMOS^TMꢀ6ꢀPower-Transistor,ꢀ120ꢀV

PG-HDSOP-16

Features

•ꢀN-channel,ꢀnormalꢀlevel

•ꢀVeryꢀlowꢀon-resistanceꢀR_DS(on)

•ꢀExcellentꢀgateꢀchargeꢀxꢀR_DS(on)ꢀproductꢀ(FOM)

•ꢀVeryꢀlowꢀreverseꢀrecoveryꢀchargeꢀ(Q_rr)

•ꢀHighꢀavalancheꢀenergyꢀrating

•ꢀ175°Cꢀoperatingꢀtemperature

•ꢀOptimizedꢀforꢀhighꢀfrequencyꢀswitchingꢀandꢀTopꢀsideꢀcooling

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

•ꢀMSLꢀ1ꢀclassifiedꢀaccordingꢀtoꢀJ-STD-020

Drain

Pin 9-16, Tab

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Gate

Pin 8

Source

Pin 1-7

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

Value

120

1.7

Unit

V_DS

R_DS(on),max

mΩ

I_D

331

266

113

301

Q_oss

Q_G

Q_rrꢀ(1000ꢀA/µs)

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

IPTC017N12NM6

PG-HDSOP-16

017N12N6

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-12-13

12 3 4 5 6 7...11

中文翻译

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