Datasheet > IPT65R155CFD7

IPT65R155CFD7

更新时间： 2024-10-31 11:14:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	1505K
描述
Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPT65R155CFD7 in a TOLL package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50 V breakdown voltage.

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IPT65R155CFD7 数据手册

IPT65R155CFD7

MOSFET

PG-HSOF-8

650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice

Theꢀlatestꢀ650ꢀVꢀCoolMOS™ꢀCFD7ꢀextendsꢀtheꢀvoltageꢀclassꢀofferingꢀof

theꢀCFD7ꢀfamilyꢀandꢀisꢀaꢀsuccessorꢀtoꢀtheꢀ650ꢀVꢀCoolMOS™ꢀCFD2.

Resultingꢀfromꢀimprovedꢀswitchingꢀperformanceꢀandꢀexcellentꢀthermal

behavior,ꢀ650ꢀVꢀCooMOS™ꢀCFD7ꢀoffersꢀhighestꢀefficiencyꢀinꢀresonant

switchingꢀtopologies,ꢀsuchꢀasꢀLLCꢀandꢀphase-shift-full-bridgeꢀ(ZVS).ꢀAs

partꢀofꢀInfineon’sꢀfastꢀbodyꢀdiodeꢀportfolio,ꢀthisꢀnewꢀproductꢀseriesꢀblends

allꢀadvantagesꢀofꢀaꢀfastꢀswitchingꢀtechnologyꢀtogetherꢀwithꢀsuperiorꢀhard

commutationꢀrobustness.ꢀTheꢀCoolMOS™ꢀCFD7ꢀtechnologyꢀmeets

highestꢀefficiencyꢀandꢀreliabilityꢀstandardsꢀandꢀfurthermoreꢀsupportsꢀhigh

powerꢀdensityꢀsolutions.

Tab

Features

Drain

tab

•ꢀUltra-fastꢀbodyꢀdiode

•ꢀ650Vꢀbreakꢀdownꢀvoltage

•ꢀBest-in-classꢀR_DS(on)

Gate

Pin 1

•ꢀReducedꢀswitchingꢀlosses

•ꢀLowꢀR_DS(on)ꢀdependencyꢀoverꢀtemperature

Driver

Source

Pin 2

Power

Source

Pin 3-8

*1: Internal body diode

*2: Integrated ESD diode

Benefits

•ꢀExcellentꢀhardꢀcommutationꢀruggedness

•ꢀExtraꢀsafetyꢀmarginꢀforꢀdesignsꢀwithꢀincreasedꢀbusꢀvoltage

•ꢀEnablingꢀincreasedꢀpowerꢀdensityꢀsolutions

•ꢀOutstandingꢀlightꢀloadꢀefficiencyꢀinꢀindustrialꢀSMPSꢀapplications

•ꢀImprovedꢀfullꢀloadꢀefficiencyꢀinꢀindustrialꢀSMPSꢀapplications

Potentialꢀapplications

Optimizedꢀforꢀphase-shiftꢀfull-bridgeꢀ(ZVS),ꢀLLCꢀApplicationsꢀ–ꢀServer,

Telecom,ꢀEVꢀCharging,ꢀSolar

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Pleaseꢀnote:ꢀTheꢀsourceꢀandꢀsenseꢀsourceꢀpinsꢀareꢀnotꢀexchangeable.

Theirꢀexchangeꢀmightꢀleadꢀtoꢀmalfunction.ꢀForꢀparallelingꢀ4pinꢀMOSFET

devicesꢀtheꢀplacementꢀofꢀtheꢀgateꢀresistorꢀisꢀgenerallyꢀrecommendedꢀtoꢀbe

onꢀtheꢀDriverꢀSourceꢀinsteadꢀofꢀtheꢀGate.

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

V_DS@ T_j,max

R_DS(on),max

Value

700

155

Unit

mΩ

Q_g,typ

I_D,pulse

E_oss@ 400V

Body diode di_F/dt

4.2

µJ

1300

A/µs

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

65R155F7

RelatedꢀLinks

IPT65R155CFD7

PG-HSOF-8

see Appendix A

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-08-04

12 3 4 5 6 7...14

中文翻译

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与IPT65R155CFD7相关器件

型号	品牌	获取价格	描述	数据表
IPT65R190CFD7	INFINEON	获取价格	Infineon’s?650 V CoolMOS? CFD7?superjunction
IPT66	HAMMOND	获取价格	DATA SUBJECT TO CHANGE WITHOUT NOTLCE
IPTA60R180CM8	INFINEON	获取价格	The 600 V CoolMOS? 8 SJ MOSFETs series is the successor to the 600 V CoolMOS? 7 MOSFET fam
IPTC007N06NM5	INFINEON	获取价格	IPTC007N06NM5 is part of the OptiMOS™ 5 power
IPTC011N08NM5	INFINEON	获取价格	IPTC011N08NM5 属于TOLT 封装 OptiMOS™ 5 功率 MOSFET
IPTC012N06NM5	INFINEON	获取价格	IPTC012N06NM5 is part of the OptiMOS™ 5 power
IPTC014N08NM5	INFINEON	获取价格	IPTC014N08NM5 属于采用 TOLT 封装的 OptiMOS? 5 功率 MOS
IPTC014N10NM5	INFINEON	获取价格	IPTC014N10NM5 属于TOLT 封装 OptiMOS™ 5 功率 MOSFET
IPTC017N12NM6	INFINEON	获取价格	This is a normal level 120 V MOSFET in TO-Lea
IPTC019N10NM5	INFINEON	获取价格	IPTC019N10NM5 属于采用 TOLT 封装的 OptiMOS? 5 功率 MOS

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