Datasheet > IPT60R180CM8

IPT60R180CM8

更新时间： 2024-05-23 22:22:08

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	1438K
描述
The 600 V CoolMOS? 8 SJ MOSFETs series is the successor to the 600 V CoolMOS? 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7.

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中文翻译

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IPT60R180CM8 数据手册

IPT60R180CM8

MOSFET

PG-HSOF-8

600VꢀCoolMOSªꢀCM8ꢀPowerꢀTransistor

TheꢀCoolMOS™ꢀ8thꢀgenerationꢀplatformꢀisꢀaꢀrevolutionaryꢀtechnologyꢀfor

highꢀvoltageꢀpowerꢀMOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunction

(SJ)ꢀprincipleꢀandꢀpioneeredꢀbyꢀInfineonꢀTechnologies.ꢀTheꢀ600V

CoolMOS™ꢀCM8ꢀseriesꢀisꢀtheꢀsuccessorꢀtoꢀtheꢀCoolMOS™ꢀ7.

ItꢀcombinesꢀtheꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSJꢀMOSFETꢀwithꢀexcellent

easeꢀofꢀuse,ꢀe.gꢀlowꢀringingꢀtendency,ꢀimplementedꢀfastꢀbodyꢀdiodeꢀ(CFD)

forꢀallꢀproductsꢀwithꢀoutstandingꢀrobustnessꢀagainstꢀhardꢀcommutationꢀand

excellentꢀESDꢀcapability.ꢀFurthermore,ꢀextremelyꢀlowꢀswitchingꢀand

conductionꢀlossesꢀofꢀCM8,ꢀmakeꢀswitchingꢀapplicationsꢀevenꢀmore

efficient.

Tab

Features

Drain

tab

•ꢀSuitableꢀforꢀhardꢀandꢀsoftꢀswitchingꢀtopologiesꢀthanksꢀtoꢀan

ꢀꢁꢀoutstandingꢀcommutationꢀruggedness

•ꢀSignificantꢀreductionꢀofꢀswitchingꢀandꢀconductionꢀlosses

•ꢀBestꢀinꢀclassꢀR_DS(on)ꢀperꢀpackageꢀproductsꢀenabledꢀbyꢀultraꢀlowꢀR_DS(on)*A

Gate

Pin 1

Driver

Source

Pin 2

Power

Source

Pin 3-8

*1: Internal body diode

*2: Integrated ESD diode

Benefits

•ꢀEaseꢀofꢀuseꢀandꢀfastꢀdesign-inꢀthroughꢀlowꢀringingꢀtendencyꢀandꢀusage

ꢀꢁꢀacrossꢀPFCꢀandꢀPWMꢀstages

•ꢀSimplifiedꢀthermalꢀmanagementꢀthanksꢀtoꢀourꢀadvancedꢀdieꢀattach

ꢀꢁꢀtechnique

•ꢀIncreasedꢀpowerꢀdensityꢀsolutionsꢀenabledꢀbyꢀusingꢀproductsꢀwith

ꢀꢁꢀsmallerꢀfootprintꢀandꢀhigherꢀmanufacturingꢀqualityꢀdueꢀstateꢀofꢀtheꢀart

ꢀꢁꢀESDꢀprotection

•ꢀSuitableꢀforꢀaꢀwideꢀvarietyꢀofꢀapplicationsꢀandꢀpowerꢀranges

Potentialꢀapplications

•ꢀPowerꢀsuppliesꢀandꢀconverters

•ꢀPFCꢀstagesꢀ&ꢀLLCꢀresonantꢀconverters

•ꢀHighꢀefficiencyꢀswitchingꢀapplications

•ꢀe.g.ꢀServer,ꢀTelecom,ꢀEVꢀCharging,ꢀUPS

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate

orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

V_DS@ T_j,max

R_DS(on),max

Value

650

180

Unit

mΩ

Q_g,typ

I_D,pulse

E_oss@ 400V

Body diode di_F/dt

ESD class (HBM)

2.4

µJ

1300

A/µs

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

60R180C8

RelatedꢀLinks

IPT60R180CM8

PG-HSOF-8

see Appendix A

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2024-03-21

12 3 4 5 6 7...14

中文翻译

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与IPT60R180CM8相关器件

型号	品牌	获取价格	描述	数据表
IPT60T022S7	INFINEON	获取价格	The CoolMOS? S7T with embedded temperature sensor increases junction temperature sensing a
IPT60T040S7	INFINEON	获取价格	The CoolMOS? S7T with embedded temperature sensor increases junction temperature sensing a
IPT60T065S7	INFINEON	获取价格	The CoolMOS? S7T with embedded temperature sensor increases junction temperature sensing a
IPT630	ETC	获取价格	TRIAC\|600V V(DRM)\|30A I(T)RMS\|PRESS-19
IPT640	ETC	获取价格	TRIAC\|600V V(DRM)\|40A I(T)RMS\|PRESS-19
IPT65R033G7XTMA1	INFINEON	获取价格	Power Field-Effect Transistor,
IPT65R040CFD7	INFINEON	获取价格	Infineon’s 650 V CoolMOS™ CFD7 superjunction
IPT65R060CFD7	INFINEON	获取价格	Infineon’s?650 V CoolMOS? CFD7?superjunction
IPT65R080CFD7	INFINEON	获取价格	Infineon’s 650 V CoolMOS™ CFD7 superjunction
IPT65R099CFD7	INFINEON	获取价格	Infineon’s?650 V CoolMOS? CFD7?superjunction

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