Datasheet > IPP60R210CFD7XKSA1

IPP60R210CFD7XKSA1

更新时间： 2024-11-02 21:12:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
2页	229K
描述
Power Field-Effect Transistor,

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IPP60R210CFD7XKSA1 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
Factory Lead Time：	18 weeks	风险等级：	1.71
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

IPP60R210CFD7XKSA1 数据手册

浏览型号IPP60R210CFD7XKSA1的Datasheet PDF文件第2页

Product Brief

600 V CoolMOS™ CFD7 SJ MOSFET

Infineon’s answer to resonant high power topologies

The 600 V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET tech-

nology with integrated fast body diode, completing the CoolMOS™ 7 series. It is the ideal

Key features

Ultra-fast body diode

Best-in-class reverse recovery

charge (Q_rr)

›

choice for resonant topologies in high power SMPS applications, such as server, telecom

and EV charging stations.

Improved reverse diode dv/dt and

dif/dt ruggedness

Lowest FOM R_DS(on)x Q_gand E_oss

Best-in-class R_DS(on)/package

combinations

›

The new CoolMOS™ CFD7 is the successor to the CoolMOS™ CFD2 family. CoolMOS™ CFD7

comes with reduced gate charge (Q_g), improved turn-oﬀ behavior and a reverse recovery

charge (Q_rr) of up to 69 percent lower compared to the competition, as well as the lowest

reverse recovery time (t_rr) in the market. Due to these features CoolMOS™ CFD7 oﬀers

highest eﬀiciency and best-in-class reliability in soꢀ switching topologies such as LLC and

ZVS phase-shiꢀ full-bridge. In addition, CoolMOS™ CFD7 enables higher power density

›

thanks to its optimized R_DS(on)

Key benefits

All together, this latest fast body diode series brings clear benefits compared to competitor

oﬀerings by combining the advantages of a fast switching technology with superior commuta-

tion ruggedness without sacrificing easy implementation in the design-in process.

Best-in-class hard commutation

ruggedness

›

Highest reliability for resonant

topologies

Highest eﬀiciency with outstanding

ease-of-use/performance trade-oﬀ

Enabling increased power density

solutions

›

Q_rrcomparison of 170 mΩ CFD vs. 190 mΩ range competition*

1200

1000

-69 %

800

World‘s best Q_rrgot even better!

600

-32 %

400

200

Comp. C

Comp. A

Comp. D

Comp. B

CFD2

CFD7

*Comparison based on datasheet values

www.infineon.com/cfd7

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与IPP60R210CFD7XKSA1相关器件

型号	品牌	获取价格	描述	数据表
IPP60R250CP	INFINEON	获取价格	CoolMOSTM Power Transistor
IPP60R250CPXKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Met
IPP60R280C6	INFINEON	获取价格	Metal Oxide Semiconductor Field Effect Transistor
IPP60R280CFD7	INFINEON	获取价格	600V CoolMOS™ CFD7 是英飞凌最新具有集成快速体二极管的高压 superj
IPP60R280CFD7XKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 9A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Meta
IPP60R280E6	INFINEON	获取价格	600V CoolMOS E6 Power Transistor
IPP60R280E6XKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IPP60R280P6	INFINEON	获取价格	Metal Oxide Semiconductor Field Effect Transistor
IPP60R280P6	ISC	获取价格	N-Channel MOSFET Transistor
IPP60R280P6_15	INFINEON	获取价格	Metal Oxide Semiconductor Field Effect Transistor

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