Datasheet > IPDQ65R125CFD7

IPDQ65R125CFD7

更新时间： 2023-12-06 20:09:36

品牌	Logo	应用领域
英飞凌 - INFINEON		光电二极管
页数	文件大小	规格书
14页	1326K
描述
Infineon’s?650 V CoolMOS? CFD7?superjunction MOSFET IPDQ65R125CFD7 in a QDPAK package is ideally suited for resonant topologies in industrial applications, such as?server,?telecom,?solar, and?EV-charging stations, in which it enables significant efficiency improvements compared to competition.? As a successor to the?CFD2 SJ MOSFET?family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50 V breakdown voltage.

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IPDQ65R125CFD7 数据手册

650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice

IPDQ65R125CFD7

1ꢀꢀꢀꢀꢀMaximumꢀratings

atꢀT_jꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

T_C=25°C

Continuous drain current¹⁾

I_D

T_C=100°C

Pulsed drain current²⁾

I_D,pulse

E_AS

E_AR

I_AS

T_C=25°C

Avalanche energy, single pulse

Avalanche energy, repetitive

Avalanche current, single pulse

MOSFET dv/dt ruggedness

Gate source voltage (static)

Gate source voltage (dynamic)

Power dissipation

I_D=4.0A; V_DD=50V; see table 10

0.39

4.0

120

I_D=4.0A; V_DD=50V; see table 10

dv/dt

V_GS

P_tot

T_stg

T_j

V/ns V_DS=0...400V

-20

-30

static;

AC (f>1 Hz)

160

150

n.a.

°C

T_C=25°C

Storage temperature

-55

Operating junction temperature

Mounting torque

Ncm -

Continuous diode forward current¹⁾

Diode pulse current²⁾

I_S

T_C=25°C

I_S,pulse

T_C=25°C

V_DS=0...400V,ꢀI_SD<=7.8A,ꢀT_j=25°Cꢀꢀꢀꢀ

Reverse diode dv/dt³⁾

dv/dt

V/ns

see table 8

V_DS=0...400V,ꢀI_SD<=7.8A,ꢀT_j=25°Cꢀꢀꢀꢀ

Maximum diode commutation speed

Insulation withstand voltage

di_F/dt

1300 A/µs

n.a.

see table 8

V_ISO

V_rms,ꢀT_C=25°C,ꢀt=1min

¹⁾Limited by T_{j max}

²⁾Pulse width t_plimited by T_j,max

³⁾Identical low side and high side switch with identical R_G

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-08-29

1 234 5 6 7...14

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