Datasheet > IPDQ65R125CFD7

IPDQ65R125CFD7

更新时间： 2023-12-06 20:09:36

品牌	Logo	应用领域
英飞凌 - INFINEON		光电二极管
页数	文件大小	规格书
14页	1326K
描述
Infineon’s?650 V CoolMOS? CFD7?superjunction MOSFET IPDQ65R125CFD7 in a QDPAK package is ideally suited for resonant topologies in industrial applications, such as?server,?telecom,?solar, and?EV-charging stations, in which it enables significant efficiency improvements compared to competition.? As a successor to the?CFD2 SJ MOSFET?family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50 V breakdown voltage.

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IPDQ65R125CFD7 数据手册

650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice

IPDQ65R125CFD7

Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics

Values

Typ.

1.0

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Diode forward voltage

Reverse recovery time

V_SD

t_rr

V_GS=0V,ꢀI_F=7.8A,ꢀT_j=25°C

V_R=400V,ꢀI_F=7.8A,ꢀdi_F/dt=100A/µs;

see table 8

105

0.52

8.6

158

1.04

V_R=400V,ꢀI_F=7.8A,ꢀdi_F/dt=100A/µs;

see table 8

Reverse recovery charge

Q_rr

I_rrm

µC

V_R=400V,ꢀI_F=7.8A,ꢀdi_F/dt=100A/µs;

see table 8

Peak reverse recovery current

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-08-29

1...3 4 567 8 9...14

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