Datasheet > IPF013N04NF2S

IPF013N04NF2S

更新时间： 2024-11-06 11:13:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	1051K
描述
Infineon's StrongIRFET™ 2 power MOSFET 40 V features low RDS(on) of 1.35 mOhm, addressing a broad range of applications from low- to high-switching frequency.

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IPF013N04NF2S 数据手册

IPF013N04NF2S

MOSFET

StrongIRFET^TM2ꢀPower-Transistor

PG-TO263-7

Features

•ꢀOptimizedꢀforꢀwideꢀrangeꢀofꢀapplications

•ꢀN-channel,ꢀnormalꢀlevel

tab

•ꢀ100%ꢀavalancheꢀtested

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Drain

Pin 4, tab

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

Value

Unit

Gate

Pin 1

V_DS

R_DS(on),max

I_D

1.35

232

117

106

mΩ

Source

Pin 2,3,5,6,7

Q_oss

Q_Gꢀ(0V..10V)

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

013N04NS

RelatedꢀLinks

IPF013N04NF2S

PG-TO263-7

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2022-10-11

12 3 4 5 6 7...11

中文翻译

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