Datasheet > IPD26N06S2L35ATMA2

IPD26N06S2L35ATMA2

更新时间： 2024-11-07 06:42:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	149K
描述
Power Field-Effect Transistor, 30A I(D), 55V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACAKGE-3/2

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IPD26N06S2L-35

OptiMOS^®Power-Transistor

Product Summary

Features

V_DS

• N-channel Logic Level - Enhancement mode

_DS(on),max(SMD version)

mΩ

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green package (lead free)

• Ultra low Rds(on)

I _D

PG-TO252-3-11

• 100% Avalanche tested

Type

Package

Marking

IPD26N06S2L-35

PG-TO252-3-11 2N06L35

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

I _D

T _C=25 °C, V_GS=10 V

T _C=100 °C,

Continuous drain current

_GS=10 V¹⁾

Pulsed drain current¹⁾

I _D,pulse

E_AS

T _C=25 °C

I _D=26A

120

Avalanche energy, single pulse

Gate source voltage

V_GS

±20

P_tot

T _C=25 °C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.0

page 1

2006-07-18

12 3 4 5 6 7 8

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IPD26N06S2L35ATMA2 替代型号

型号	品牌	替代类型	描述	数据表
IPD26N06S2L35ATMA1	INFINEON	完全替代	Power Field-Effect Transistor, 30A I(D), 55V, 0.047ohm, 1-Element, N-Channel, Silicon, Met

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