是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.77 |
其他特性: | DIGITAL, BUILT-IN BIAS RESISTOR | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 100 | JESD-30 代码: | R-PDSO-G6 |
JESD-609代码: | e1 | 元件数量: | 2 |
端子数量: | 6 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
VCEsat-Max: | 0.3 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IMH15AT110 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, SC-74, | |
IMH1A | ROHM |
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General purpose (dual digital transistors) | |
IMH1A | TYSEMI |
获取价格 |
Input voltage:Vin=40V, Output current: IO=30mA | |
IMH1A | KEXIN |
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Dual Digital Transistors | |
IMH1AT108 | ROHM |
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Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, | |
IMH1AT109 | ROHM |
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Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, | |
IMH2 | ETC |
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TRANSISTOR | SO | |
IMH20 | ROHM |
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General purpose (dual digital transistors) | |
IMH20T1G | ONSEMI |
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Dual Bias Resistor Transistor | |
IMH20T1GT1 | ONSEMI |
获取价格 |
Dual Bias Resistor Transistor |