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IMH20T1G PDF预览

IMH20T1G

更新时间: 2024-11-03 21:53:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管光电二极管
页数 文件大小 规格书
4页 27K
描述
Dual Bias Resistor Transistor

IMH20T1G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-74包装说明:SC-74, 6 PIN
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.76Is Samacsys:N
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:15 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G6元件数量:2
端子数量:6封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

IMH20T1G 数据手册

 浏览型号IMH20T1G的Datasheet PDF文件第2页浏览型号IMH20T1G的Datasheet PDF文件第3页浏览型号IMH20T1G的Datasheet PDF文件第4页 
IMH20T1G  
Dual Bias Resistor  
Transistor  
NPN Surface Mount  
Low V (sat) 80 mV max at IC/IB = 50 mA/2.5 mA  
CC  
http://onsemi.com  
High Current: I = 600 mA max  
C
Lead Free Plating  
MAXIMUM RATINGS (T = 25°C)  
A
(6)  
(4)  
Rating  
Symbol  
Value  
30  
Unit  
Vdc  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
(BR)CBO  
(BR)CEO  
(BR)EBO  
(5)  
R1  
V
V
15  
Vdc  
Q2  
R1  
Q
1
5.0  
Vdc  
(2)  
Collector Current - Continuous  
I
C
600  
mAdc  
THERMAL CHARACTERISTICS  
(1)  
(3)  
Characteristic  
Power Dissipation*  
Symbol  
Max  
300  
Unit  
mW  
°C  
P
D
SC-74  
Junction Temperature  
Storage Temperature  
*Total for both Elements  
T
J
150  
T
stg  
- 55 to +150  
°C  
MARKING  
DIAGRAM  
6
1
xx  
M
SC-74  
xx = Specific Device Code  
= Date Code  
M
ORDERING INFORMATION  
{
Package  
Shipping  
Device  
IMH20T1G  
SC-74  
3000/Tape & Reel  
†The “T1” suffix refers to a 7-inch reel.  
Semiconductor Components Industries, LLC, 2003  
Publication Order Number:  
IMH20T1G/D  
July, 2003 - Rev. 0  

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