Datasheet > IMH21

IMH21

更新时间： 2024-10-30 11:19:55

品牌	Logo	应用领域
罗姆 - ROHM		晶体数字晶体管
页数	文件大小	规格书
3页	66K
描述
Dual digital transistors

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IMH21 数据手册

IMH21

Transistors

Dual digital transistors

IMH21

zFeatures

zExternal dimensions (Unit : mm)

In addition to the features of regular digital transistors.

1) Low saturation voltage, typically

V^{CE (sat)}=40mV at IC / IB=50mA / 2.5mA, makes these

transistors ideal for muting circuits.

2) These transistors can be used at high current levels,

I^C=600mA.

SMT6

1pin mark

1.6

2.8

3) Two DTC614T chips in a SMT package.

0.3Min.

Each lead has same dimensions

zStructure

NPN digital transistor

(Built-in resistor type)

Abbreviated symbol : H21

zEquivalent circuit

(4)

(5)

(6)

R1=10kΩ

(3)

(2)

(1)

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Limits

Unit

600

°C

∗

Collector power dissipation

Junction temperature

Storage temperature

P_C

300(TOTAL)

150

Tstg

−55 to +150

∗ 200mW per element must not be exceeded.

1/2

12 3

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