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IMH24 PDF预览

IMH24

更新时间: 2024-10-29 23:15:03
品牌 Logo 应用领域
罗姆 - ROHM 晶体数字晶体管
页数 文件大小 规格书
3页 66K
描述
Dual digital transistors

IMH24 数据手册

 浏览型号IMH24的Datasheet PDF文件第2页浏览型号IMH24的Datasheet PDF文件第3页 
IMH24  
Transistors  
Dual digital transistors  
IMH24  
zExternal dimensions (Unit : mm)  
zFeatures  
In addition to the features of regular digital transistors.  
1) Low saturation voltage, typically  
VCE (sat) =40mV at IC / IB=50mA / 2.5mA, makes these  
transistors ideal for muting circuits.  
2) These transistors can be used at high current levels,  
IC=600mA.  
SMT6  
1pin mark  
1.6  
2.8  
3) Two DTC623T chips in a SMT package.  
0.3Min.  
Each lead has same dimensions  
zStructure  
Abbreviated symbol : H24  
NPN digital transistor  
(Built-in resistor type)  
zEquivalent circuit  
(4)  
(5)  
(6)  
R
1
1
R
R1=2.2kΩ  
(3)  
(2)  
(1)  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Limits  
Unit  
V
20  
20  
V
12  
V
600  
mA  
mW ∗  
°C  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
300(TOTAL)  
150  
Tj  
Tstg  
55 to +150  
°C  
200mW per element must not be exceeded.  
1/2  

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