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IDT71V65603ZS133PFG PDF预览

IDT71V65603ZS133PFG

更新时间： 2024-09-19 07:39:59
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
26页 440K
描述
ZBT SRAM, 256KX36, 4.2ns, CMOS, PQFP100, PLASTIC, MO-136, TQFP-100

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IDT71V65603ZS133PFG 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：QFP
包装说明：LQFP,针数：100
Reach Compliance Code：compliantECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41风险等级：5.6
最长访问时间：4.2 ns其他特性：BURST COUNTER
JESD-30 代码：R-PQFP-G100JESD-609代码：e3
长度：20 mm内存密度：9437184 bit
内存集成电路类型：ZBT SRAM内存宽度：36
湿度敏感等级：3功能数量：1
端子数量：100字数：262144 words
字数代码：256000工作模式：SYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：256KX36封装主体材料：PLASTIC/EPOXY
封装代码：LQFP封装形状：RECTANGULAR
封装形式：FLATPACK, LOW PROFILE并行/串行：PARALLEL
峰值回流温度（摄氏度）：260认证状态：Not Qualified
座面最大高度：1.6 mm最大供电电压 (Vsup)：3.465 V
最小供电电压 (Vsup)：3.135 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子面层：MATTE TIN
端子形式：GULL WING端子节距：0.65 mm
端子位置：QUAD处于峰值回流温度下的最长时间：30
宽度：14 mm

IDT71V65603ZS133PFG 数据手册

 浏览型号IDT71V65603ZS133PFG的Datasheet PDF文件第2页浏览型号IDT71V65603ZS133PFG的Datasheet PDF文件第3页浏览型号IDT71V65603ZS133PFG的Datasheet PDF文件第4页浏览型号IDT71V65603ZS133PFG的Datasheet PDF文件第5页浏览型号IDT71V65603ZS133PFG的Datasheet PDF文件第6页浏览型号IDT71V65603ZS133PFG的Datasheet PDF文件第7页 
256K x 36, 512K x 18  
3.3V Synchronous ZBT™ SRAMs  
ZBT™Feature  
IDT71V65603/Z  
IDT71V65803/Z  
3.3V I/O, Burst Counter  
PipelinedOutputs  
Features  
AddressandcontrolsignalsareappliedtotheSRAMduringoneclock  
cycle,andtwocycleslatertheassociateddatacycleoccurs,beitreadorwrite.  
TheIDT71V65603/5803containdataI/O,addressandcontrolsignal  
registers.Outputenableistheonlyasynchronoussignalandcanbeused  
todisabletheoutputsatanygiventime.  
◆
256K x 36, 512K x 18 memory configurations  
◆
Supports high performance system speed - 150MHz  
(3.8ns Clock-to-Data Access)  
◆
ZBTTM Feature - No dead cycles between write and read cycles  
◆
Internally synchronized output buffer enable eliminates the  
AClockEnable(CEN)pinallowsoperationoftheIDT71V65603/5803to  
besuspendedaslongasnecessary.Allsynchronousinputsareignoredwhen  
(CEN)ishighandtheinternaldeviceregisterswillholdtheirpreviousvalues.  
Therearethreechipenablepins(CE1, CE2, CE2)thatallowtheuser  
todeselectthedevicewhendesired.Ifanyoneofthesethreearenotasserted  
whenADV/LDislow,nonewmemoryoperationcanbeinitiated.However,  
anypendingdatatransfers(readsorwrites)willbecompleted.Thedatabus  
willtri-statetwocyclesafterchipisdeselectedorawriteisinitiated.  
TheIDT71V65603/5803haveanon-chipburstcounter.Intheburst  
mode,theIDT71V65603/5803canprovidefourcyclesofdataforasingle  
address presented to the SRAM. The order of the burst sequence is  
defined by the LBO input pin. The LBO pin selects between linear and  
interleaved burst sequence. The ADV/LDsignal is used to load a new  
externaladdress(ADV/LD=LOW) orincrementtheinternalburstcounter  
(ADV/LD = HIGH).  
need to control OE  
Single R/W (READ/WRITE) control pin  
Positive clock-edge triggered address, data, and control  
signal registers for fully pipelined applications  
4-word burst capability (interleaved or linear)  
Individual byte write (BW1 - BW4) control (May tie active)  
Three chip enables for simple depth expansion  
3.3V power supply (±5%)  
3.3V I/O Supply (VDDQ)  
Power down controlled by ZZ input  
Packaged in a JEDEC standard 100-pin plastic thin quad  
flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch  
ball grid array(fBGA).  
◆
◆
◆
◆
◆
◆
◆
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Description  
The IDT71V65603/5803 are 3.3V high-speed 9,437,184-bit  
(9Megabit)synchronousSRAMS.Theyaredesignedtoeliminatedeadbus  
cycleswhenturningthebusaroundbetweenreadsandwrites, orwritesand  
reads.Thus,theyhavebeengiventhenameZBTTM,orZeroBusTurnaround.  
The IDT71V65603/5803 SRAM utilize IDT's latest high-performance  
CMOSprocess,andarepackagedinaJEDECStandard14mmx20mm100-  
pinthinplasticquadflatpack(TQFP)aswellasa119ballgridarray(BGA)and  
165 fine pitch ball grid array (fBGA) .  
PinDescriptionSummary  
A
0-A18  
Address Inputs  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
I/O  
Synchronous  
Synchronous  
Asynchronous  
Synchronous  
Synchronous  
Synchronous  
N/A  
Chip Enables  
CE1  
, CE  
2
, CE  
2
Output Enable  
OE  
R/W  
Read/Write Signal  
Clock Enable  
CEN  
Individual Byte Write Selects  
Clock  
BW  
1
, BW  
2
, BW  
3
, BW  
4
CLK  
ADV/LD  
LBO  
Advance burst address / Load new address  
Linear / Interleaved Burst Order  
Sleep Mode  
Synchronous  
Static  
ZZ  
Asynchronous  
Synchronous  
Static  
I/O  
0
-I/O31, I/OP1-I/OP4  
Data Input / Output  
Core Power, I/O Power  
Ground  
V
V
DD, VDDQ  
SS  
Supply  
Supply  
Static  
5304 tbl 01  
ZBT and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc. and the architecture is supported by Micron Technology and Motorola, Inc.  
FEBRUARY 2007  
1
©2007IntegratedDeviceTechnology,Inc.  
DSC-5304/07  
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与IDT71V65603ZS133PFG相关器件

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IDT71V65603ZS133PFGI IDT

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 		ZBT SRAM, 256KX36, 4.2ns, CMOS, PQFP100, PLASTIC, MO-136, TQFP-100
IDT71V65603ZS150BGG IDT

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 		ZBT SRAM, 256KX36, 3.8ns, CMOS, PBGA119, MS-028AA, BGA-119
IDT71V65603ZS150BQG IDT

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 		ZBT SRAM, 256KX36, 3.8ns, CMOS, PBGA165, FBGA-165
IDT71V65603ZS150PFG IDT

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 		ZBT SRAM, 256KX36, 3.8ns, CMOS, PQFP100, PLASTIC, MO-136, TQFP-100
IDT71V65613S166BG8 IDT

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 		ZBT SRAM, 256KX36, 3.5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119
IDT71V656S133BG IDT

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 		ZBT SRAM, 256KX36, 4.2ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119
IDT71V656S166BG IDT

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 		ZBT SRAM, 256KX36, 3.5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119
IDT71V656S166PF IDT

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 		ZBT SRAM, 256KX36, 3.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, TQFP-100
IDT71V656S200BG IDT

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 		ZBT SRAM, 256KX36, 3.2ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119
IDT71V65702 ETC

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 		256K x 36, 512K x 18 3.3V Synchronous ZB TM SRAMs 2.5V I/O, Burst Counter Flow-Through Out

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