5秒后页面跳转
IDT70V28L20PFGI8 PDF预览

IDT70V28L20PFGI8

更新时间: 2024-09-15 14:51:23
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
17页 141K
描述
Dual-Port SRAM, 64KX16, 20ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, GREEN, TQFP-100

IDT70V28L20PFGI8 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:QFP
包装说明:LFQFP, QFP100,.63SQ,20针数:100
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.33
最长访问时间:20 nsI/O 类型:COMMON
JESD-30 代码:S-PQFP-G100JESD-609代码:e3
长度:14 mm内存密度:1048576 bit
内存集成电路类型:DUAL-PORT SRAM内存宽度:16
湿度敏感等级:3功能数量:1
端口数量:2端子数量:100
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:64KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:LFQFP封装等效代码:QFP100,.63SQ,20
封装形状:SQUARE封装形式:FLATPACK, LOW PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3.3 V认证状态:Not Qualified
座面最大高度:1.6 mm最大待机电流:0.003 A
最小待机电流:3 V子类别:SRAMs
最大压摆率:0.22 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子节距:0.5 mm
端子位置:QUAD处于峰值回流温度下的最长时间:30
宽度:14 mmBase Number Matches:1

IDT70V28L20PFGI8 数据手册

 浏览型号IDT70V28L20PFGI8的Datasheet PDF文件第2页浏览型号IDT70V28L20PFGI8的Datasheet PDF文件第3页浏览型号IDT70V28L20PFGI8的Datasheet PDF文件第4页浏览型号IDT70V28L20PFGI8的Datasheet PDF文件第5页浏览型号IDT70V28L20PFGI8的Datasheet PDF文件第6页浏览型号IDT70V28L20PFGI8的Datasheet PDF文件第7页 
IDT70V28L  
HIGH-SPEED 3.3V  
64K x 16 DUAL-PORT  
STATIC RAM  
Features  
True Dual-Ported memory cells which allow simultaneous  
access of the same memory location  
High-speed access  
M/S = VIH for BUSY output flag on Master,  
M/S = VIL for BUSY input on Slave  
Busy and Interrupt Flags  
On-chip port arbitration logic  
Full on-chip hardware support of semaphore signaling  
between ports  
Fully asynchronous operation from either port  
Separate upper-byte and lower-byte controls for multi-  
plexed bus and bus matching compatibility  
LVTTL-compatible, single 3.3V (±0.3V) power supply  
Available in a 100-pin TQFP  
Industrial temperature range (–40°C to +85°C) is available  
for selected speeds  
Green parts available, see ordering information  
– Commercial:15/20ns (max.)  
Industrial:20ns (max.)  
Low-power operation  
IDT70V28L  
Active: 440mW (typ.)  
Standby: 660µW (typ.)  
Dual chip enables allow for depth expansion without  
external logic  
IDT70V28 easily expands data bus width to 32 bits or  
more using the Master/Slave select when cascading more  
than one device  
Functional Block Diagram  
R/W  
L
R/WR  
UBL  
UBR  
CE0L  
CE0R  
CE1L  
CE1R  
OE  
R
OE  
L
L
LBR  
LB  
I/O8-15L  
I/O8-15R  
I/O0-7R  
I/O  
Control  
I/O  
Control  
0-7L  
I/O  
(1,2)  
(1,2)  
BUSY  
R
BUSY  
L
64Kx16  
MEMORY  
ARRAY  
70V28  
15L  
A
15R  
A
Address  
Decoder  
Address  
Decoder  
0L  
A
A0R  
16  
16  
ARBITRATION  
INTERRUPT  
SEMAPHORE  
LOGIC  
CE0R  
CE0L  
CE1L  
OEL  
CE1R  
OER  
R/W  
L
R/WR  
SEM  
INT  
L
L
SEM  
R
(2)  
(2)  
INTR  
M/S(1)  
NOTES:  
4849 drw 01  
1. BUSY is an input as a Slave (M/S=VIL) and an output when it is a Master (M/S=VIH).  
2. BUSY and INT are non-tri-state totem-pole outputs (push-pull).  
OCTOBER 2008  
1
DSC-4849/5  
©2008IntegratedDeviceTechnology,Inc.  

与IDT70V28L20PFGI8相关器件

型号 品牌 获取价格 描述 数据表
IDT70V28L20PFI IDT

获取价格

HIGH-SPEED 3.3V 64K x 16 DUAL-PORT STATIC RAM
IDT70V321L25PF IDT

获取价格

Multi-Port SRAM, 2KX8, 25ns, CMOS, PQFP64, PLASTIC, TQFP-64
IDT70V321L35J8 IDT

获取价格

Multi-Port SRAM, 2KX8, 35ns, CMOS, PQCC52, PLASTIC, LCC-52
IDT70V321L35PF IDT

获取价格

Multi-Port SRAM, 2KX8, 35ns, CMOS, PQFP64, PLASTIC, TQFP-64
IDT70V321L35PF8 IDT

获取价格

Multi-Port SRAM, 2KX8, 35ns, CMOS, PQFP64, PLASTIC, TQFP-64
IDT70V321L55J IDT

获取价格

Multi-Port SRAM, 2KX8, 55ns, CMOS, PQCC52, PLASTIC, LCC-52
IDT70V321L55J8 IDT

获取价格

Multi-Port SRAM, 2KX8, 55ns, CMOS, PQCC52, PLASTIC, LCC-52
IDT70V321S25PF IDT

获取价格

Multi-Port SRAM, 2KX8, 25ns, CMOS, PQFP64, PLASTIC, TQFP-64
IDT70V321S35PF IDT

获取价格

Multi-Port SRAM, 2KX8, 35ns, CMOS, PQFP64, PLASTIC, TQFP-64
IDT70V321S35PF8 IDT

获取价格

Multi-Port SRAM, 2KX8, 35ns, CMOS, PQFP64, PLASTIC, TQFP-64