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IBM11M4735C-70J PDF预览

IBM11M4735C-70J

更新时间: 2024-10-28 21:20:51
品牌 Logo 应用领域
国际商业机器公司 - IBM 动态存储器内存集成电路
页数 文件大小 规格书
29页 323K
描述
EDO DRAM Module, 4MX72, 70ns, CMOS, DIMM-168

IBM11M4735C-70J 技术参数

生命周期:Obsolete零件包装代码:DIMM
包装说明:DIMM, DIMM168针数:168
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.28风险等级:5.84
Is Samacsys:N访问模式:FAST PAGE WITH EDO
最长访问时间:70 ns其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
备用内存宽度:36I/O 类型:COMMON
JESD-30 代码:R-XDMA-N168内存密度:301989888 bit
内存集成电路类型:EDO DRAM MODULE内存宽度:72
功能数量:1端口数量:1
端子数量:168字数:4194304 words
字数代码:4000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:4MX72输出特性:3-STATE
封装主体材料:UNSPECIFIED封装代码:DIMM
封装等效代码:DIMM168封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY电源:5 V
认证状态:Not Qualified刷新周期:4096
自我刷新:NO最大待机电流:0.018 A
子类别:Other Memory ICs最大压摆率:1.17 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子形式:NO LEAD端子节距:1.27 mm
端子位置:DUALBase Number Matches:1

IBM11M4735C-70J 数据手册

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indemnity under the intellectual property rights of IBM or third parties. The products described in this document are not intended for  
use in implantation or other direct life support applications where malfunction may result in direct physical harm or injury to persons.  
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