Datasheet > IBM11N1645LB-70J

IBM11N1645LB-70J

更新时间： 2024-02-28 00:06:37

品牌	Logo	应用领域
国际商业机器公司 - IBM		动态存储器光电二极管内存集成电路
页数	文件大小	规格书
31页	344K
描述
EDO DRAM Module, 1MX64, 70ns, CMOS, PDMA168

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中文翻译

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技术参数
数据手册

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IBM11N1645LB-70J 技术参数

生命周期：	Obsolete	包装说明：	DIMM, DIMM168
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	最长访问时间：	70 ns
I/O 类型：	COMMON	JESD-30 代码：	R-PDMA-N168
内存密度：	67108864 bit	内存集成电路类型：	EDO DRAM MODULE
内存宽度：	64	端子数量：	168
字数：	1048576 words	字数代码：	1000000
最高工作温度：	70 °C	最低工作温度：
组织：	1MX64	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	DIMM
封装等效代码：	DIMM168	封装形状：	RECTANGULAR
封装形式：	MICROELECTRONIC ASSEMBLY	电源：	3.3 V
认证状态：	Not Qualified	刷新周期：	1024
座面最大高度：	25.4 mm	自我刷新：	NO
最大待机电流：	0.004 A	子类别：	DRAMs
最大压摆率：	0.56 mA	标称供电电压 (Vsup)：	3.3 V
表面贴装：	NO	技术：	CMOS
温度等级：	COMMERCIAL	端子形式：	NO LEAD
端子节距：	1.27 mm	端子位置：	DUAL
Base Number Matches：	1

IBM11N1645LB-70J 数据手册

IBM11N1645L1M

x 64 E12/12, 3.3V, AuMMDL24DSU-001020633. IBM11N1735Q1M x 72 E12/12, 3.3V, AuMMDL24DSU-001020633.

IBM11N1645L

IBM11N1735Q

1M x 64/72 DRAM Module

Features

• 168 Pin JEDEC Standard, Unbuffered 8 Byte

Dual In-line Memory Module

• System Performance Beneﬁts:

-Non buffered for increased performance

• 1Mx64, 1Mx72 Extended Data Out Page Mode

DIMMS

-Reduced noise (35 V /V pins)

SS CC

-Byte write, byte read accesses

-Serial PDs

• Performance:

-60

-6R

-70

• Extended Data Out (EDO) Mode, Read-Modify-

Write Cycles

t_RAC

t_CAC

t_AA

RAS Access Time

CAS Access Time

60ns

15ns

60ns 70ns

17ns 20ns

30ns 35ns

• Refresh Modes: RAS-Only, CBR and Hidden

Refresh

Access Time From Address 30ns

t_RC

Cycle Time

104ns 104ns 124ns

25ns 25ns 30ns

• 1024 refresh cycles distributed across 16ms

• 10/10 addressing (Row/Column)

t_HPC

EDO Mode Cycle Time

• All inputs and outputs are LVTTL (3.3V) com-

patible

• Card Sizes:

• Single 3.3V ± 0.3V Power Supply

-5.25” x 1.0” x 0.102” (TSOP)

-5.25” x 1.25” x 0.202” (SOJ)

• Au contacts

• Optimized for byte-write, non-parity, or ECC

applications.

• DRAMS in TSOP OR SOJ Packages

Description

IBM11N1645L/IBM11N1735Q industry standard

168-pin 8-byte Dual In-line Memory Modules

(DIMMs) which are organized as 1Mx64 and 1Mx72

high speed memory arrays designed with EDO

DRAMs for non-parity or ECC applications. The x64

DIMM uses 4 1Mx16 EDO DRAMs (TSOP or SOJ)

and the x72 DIMM uses 4 1Mx16 plus 2 1Mx4 EDO

DRAMs (all in SOJ packages). The use of EDO

DRAMs allows for a reduction in Page Mode Cycle

time from 40ns (Fast Page) to 25ns for 60ns DRAM

modules.

(SCL) and Data I/O (SDA) lines to synchronously

clock data between the master (system logic) and

the slave EEPROM device (DIMM). The EEPROM

device address pins (SA0-2) are brought out to the

DIMM tabs to allow 8 unique DIMM/EEPROM

addresses. The first 128 bytes are utilized by the

DIMM manufacturer and the second 128 bytes of

serial PD data are available to the customer.

All IBM 168-pin DIMMs provide a high performance,

flexible 8-byte interface in a 5.25” long space-saving

footprint. Related products include the unbuffered

X72 ECC DIMMs and the buffered DIMMs (x64, x72

parity and x72 ECC Optmized) for applications

which can benefit from the on-card buffers.

The DIMMs use serial presence detects imple-

mented via a serial EEPROM using the two pin I C

protocol. This communication protocol uses Clock

Card Outline (TSOP version shown)

(Front)

(Back)

10 11

94 95

168

40 41

124 125

Use is further subject to the provisions at the end of this document.

50H8035

SA14-4630-02

Revised 5/96

Page 1 of 33

12 3 4 5 6 7...31

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与IBM11N1645LB-70J相关器件

型号	品牌	获取价格	描述	数据表
IBM11N16645BB-60	ETC	获取价格	x64 EDO Page Mode DRAM Module
IBM11N16645CB-60	ETC	获取价格	x64 EDO Page Mode DRAM Module
IBM11N16735BB-60	ETC	获取价格	x72 EDO Page Mode DRAM Module
IBM11N16735CB-50	ETC	获取价格	x72 EDO Page Mode DRAM Module
IBM11N16735CB-60	ETC	获取价格	x72 EDO Page Mode DRAM Module
IBM11N16845CB-6RJ	IBM	获取价格	EDO DRAM Module, 16MX72, 60ns, CMOS, DIMM-168
IBM11N1735BB-60J	ETC	获取价格	x72 EDO Page Mode DRAM Module
IBM11N1735BB-70J	ETC	获取价格	x72 EDO Page Mode DRAM Module
IBM11N1735QB-60J	IBM	获取价格	EDO DRAM Module, 1MX72, 60ns, CMOS, DIMM-168
IBM11N1735QB-70J	ETC	获取价格	x72 EDO Page Mode DRAM Module

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