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IAUT240N08S5N019ATMA1 PDF预览

IAUT240N08S5N019ATMA1

更新时间: 2024-02-01 12:40:12
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
9页 245K
描述
Power Field-Effect Transistor, 240A I(D), 80V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOF-8-1, 8 PIN

IAUT240N08S5N019ATMA1 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-F2Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:1.67雪崩能效等级(Eas):400 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:80 V最大漏极电流 (ID):240 A
最大漏源导通电阻:0.0019 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-F2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):960 A参考标准:AEC-Q101
表面贴装:YES端子面层:Tin (Sn)
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IAUT240N08S5N019ATMA1 数据手册

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IAUT240N08S5N019  
Values  
typ.  
Parameter  
Symbol  
Conditions  
Unit  
min.  
max.  
Dynamic characteristics2)  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
C iss  
C oss  
Crss  
t d(on)  
t r  
-
-
-
-
-
-
-
7126  
1152  
51  
9264 pF  
1498  
VGS=0 V, VDS=40 V,  
f =1 MHz  
76  
18  
-
-
-
-
ns  
12  
V
DD=40 V, VGS=10 V,  
I D=100 A, R G=3.5  
t d(off)  
t f  
Turn-off delay time  
Fall time  
35  
36  
Gate Charge Characteristics2)  
Gate to source charge  
Gate to drain charge  
Gate charge total  
Q gs  
-
-
-
-
32  
22  
42  
33  
130  
-
nC  
Q gd  
VDD=40 V, I D=100 A,  
GS=0 to 10 V  
V
Q g  
100  
4.7  
Vplateau  
Gate plateau voltage  
V
A
Reverse Diode  
Diode continous forward current2)  
Diode pulse current2)  
I S  
-
-
-
-
240  
960  
T C=25 °C  
I S,pulse  
VGS=0 V, I F=100 A,  
T j=25 °C  
VSD  
Diode forward voltage  
-
0.9  
1.2  
V
Reverse recovery time2)  
t rr  
-
-
71  
-
-
ns  
VR=40 V, I F=50A,  
diF/dt =100 A/µs  
Reverse recovery charge2)  
Q rr  
126  
nC  
1) Current is limited by bondwire; with an R thJC = 0.65 K/W the chip is able to carry 246A at 25°C.  
2) Defined by design. Not subject to production test.  
Rev. 1.0  
page 3  
2017-07-20  

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