Datasheet > IAUCN04S7N005

IAUCN04S7N005

更新时间： 2024-04-09 19:00:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	791K
描述
A portfolio of 16 products (RDS (on)?max from 0.4 mΩ to 3.0 mΩ which enables the best product fit in the applications.

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IAUCN04S7N005 数据手册

OptiMOS™ 7 Automotive Power MOSFET, 40 V

IAUCN04S7N005

Thermal characteristics²⁾

Parameter

Values

typ.

Symbol

Conditions

Unit

min.

max.

R _thJC

R _thJA

Thermal resistance, junction - case

Thermal resistance,

junction - ambient⁴⁾

–

0.42

0.84 K/W

–

26.9

–

Electrical characteristics

at T_j=25 °C, unless otherwise specified

Parameter

Values

typ.

Symbol

Conditions

Unit

min.

max.

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

V _GS=0 V,

I _D=1 mA

V _(BR)DSS

V _GS(th)

I _DSS

2.2

–

2.6

–

3.0

V _DS=V _GS, I _D=95 µA

V _DS=40 V, V _GS=0 V, T _j=25 °C

Zero gate voltage drain current

µA

V _DS=40 V, V _GS=0 V,

T _j=100 °C²⁾

–

I _GSS

V _GS=20 V, V _DS=0 V

V _GS=7 V, I _D=44 A

V _GS=10 V, I _D=88 A

–

Gate-source leakage current

–

100 nA

0.70 mΩ

0.55

R _DS(on)

Drain-source on-state resistance

0.61

0.50

1.1

Gate resistance²⁾

R _G

–

Data Sheet

Rev 1.0

2023-05-30

1 2 345 6 7...12

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