5秒后页面跳转
IAUS300N10S5N014 PDF预览

IAUS300N10S5N014

更新时间: 2024-11-06 14:56:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 971K
描述
Next to others it is used in 48V Main Inverter / Starter Generators, DCDC Converter as well as 48V Auxiliaries such as eTurbo or HVAC Compressors.

IAUS300N10S5N014 数据手册

 浏览型号IAUS300N10S5N014的Datasheet PDF文件第2页浏览型号IAUS300N10S5N014的Datasheet PDF文件第3页浏览型号IAUS300N10S5N014的Datasheet PDF文件第4页浏览型号IAUS300N10S5N014的Datasheet PDF文件第5页浏览型号IAUS300N10S5N014的Datasheet PDF文件第6页浏览型号IAUS300N10S5N014的Datasheet PDF文件第7页 
IAUS300N10S5N014  
OptiMOS™-5 Power-Transistor  
Product Summary  
VDS  
RDS(on)  
ID  
100  
1.4  
V
mW  
A
Features  
300  
• OptiMOS™ power MOSFET for automotive applications  
PG-HSOG-8-1  
Tab  
• N-channel – Enhancement mode – Normal Level  
• Extended qualification beyond AEC-Q101  
• Enhanced electrical testing  
8
• Robust design  
1
Tab  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green product (RoHS compliant)  
• 100% Avalanche tested  
1
8
Type  
Package  
Marking  
IAUS300N10S5N014  
PG-HSOG-8-1  
A10S5N14  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
V GS=10 V, Chip  
limitation1,2)  
V GS=10V, DC  
current3)  
T a=85 °C, V GS=10 V,  
R thJA on 2s2p2,4)  
I D  
Continuous drain current  
360  
300  
46  
A
Pulsed drain current2)  
I D,pulse  
E AS  
I AS  
T C=25 °C, t p= 100 µs  
1315  
652  
Avalanche energy, single pulse2)  
Avalanche current, single pulse  
Gate source voltage  
I D=150 A  
mJ  
A
-
300  
V GS  
P tot  
-
±20  
V
T C=25 °C  
Power dissipation  
375  
W
°C  
T j, T stg  
-
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-
-
-55 ... +175  
55/175/56  
Rev. 1.1  
page 1  
2021-01-26  

与IAUS300N10S5N014相关器件

型号 品牌 获取价格 描述 数据表
IAUS300N10S5N015T INFINEON

获取价格

The IAUS300N10S5N015T is a 1.5 m?, topside-co
IAUT150N10S5N035 INFINEON

获取价格

Power Field-Effect Transistor, 150A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon,
IAUT150N10S5N035ATMA1 INFINEON

获取价格

Power Field-Effect Transistor, 150A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon,
IAUT165N08S5N029 INFINEON

获取价格

车规级MOSFET
IAUT200N08S5N023 INFINEON

获取价格

车规级MOSFET
IAUT240N08S5N019 INFINEON

获取价格

车规级MOSFET
IAUT240N08S5N019ATMA1 INFINEON

获取价格

Power Field-Effect Transistor, 240A I(D), 80V, 0.0019ohm, 1-Element, N-Channel, Silicon, M
IAUT260N10S5N019 INFINEON

获取价格

Power Field-Effect Transistor,
IAUT260N10S5N019ATMA1 INFINEON

获取价格

Power Field-Effect Transistor,
IAUT300N08S5N011 INFINEON

获取价格

Next to others it is used in 48V Main Inverter / Starter Generators, DCDC Converter as wel