Datasheet > IAUT200N08S5N023

IAUT200N08S5N023

更新时间： 2024-11-23 14:56:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	250K
描述
车规级MOSFET

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IAUT200N08S5N023 数据手册

IAUT200N08S5N023

OptiMOS™-5 Power-Transistor

Product Summary

V_DS

R_DS(on)

I_D

2.3

200

Features

• N-channel - Enhancement mode

PG-HSOF-8-1

Tab

• AEC qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant)

• Ultra low Rds(on)

Tab

• 100% Avalanche tested

Type

Package

Marking

5N08023

IAUT200N08S5N023

PG-HSOF-8-1

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

T _C=25°C, V_GS=10V¹⁾

I _D

Continuous drain current

200

T _C=100 °C,

V_GS=10 V²⁾

148

Pulsed drain current²⁾

I _D,pulse

E_AS

I _AS

T _C=25 °C

800

330

200

±20

200

Avalanche energy, single pulse²⁾

Avalanche current, single pulse

Gate source voltage

I _D=100 A

V_GS

P_tot

T _C=25 °C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.1

page 1

2023-06-23

12 3 4 5 6 7...9

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