Datasheet > IAUCN04S7N005

IAUCN04S7N005

更新时间： 2024-04-09 19:00:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	791K
描述
A portfolio of 16 products (RDS (on)?max from 0.4 mΩ to 3.0 mΩ which enables the best product fit in the applications.

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IAUCN04S7N005 数据手册

OptiMOS™ 7 Automotive Power MOSFET, 40 V

IAUCN04S7N005

Maximum ratings

at Tj=25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

V _GS=10 V, Chip limitation^1,2)

V _GS=10V, DC current³⁾

I _D

414

175

Continuous drain current

T _a=100 °C, V _GS=10 V, R _thJA

on 2s2p^2,4)

Pulsed drain current²⁾

I _D,pulse

E _AS

T _C=25 °C, t _p= 100 µs

1400

332

Avalanche energy, single pulse²⁾

Avalanche current, single pulse

Gate source voltage

I _D=75 A

I _AS

150

–

V _GS

±20

–

P _tot

T _C=25 °C

179

°C

Power dissipation

T _j, T _stg

-55 ... +175

Operating and storage temperature

–

Data Sheet

Rev 1.0

2023-05-30

1 234 5 6 7...12

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