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IAUS300N08S5N011 PDF预览

IAUS300N08S5N011

更新时间: 2023-12-06 20:06:30
品牌 Logo 应用领域
英飞凌 - INFINEON 电池
页数 文件大小 规格书
10页 1781K
描述
?Next to others it is used in 48V Main Inverter / Starter Generators, DCDC Converter as well as 48V Battery Main Switches.

IAUS300N08S5N011 数据手册

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IAUS300N08S5N011  
OptiMOS™-5 Power-Transistor  
Product Summary  
VDS  
RDS(on)  
ID  
80  
1.1  
300  
V
mW  
A
Features  
• OptiMOS™ power MOSFET for automotive applications  
PG-HSOG-8-1  
Tab  
• N-channel – Enhancement mode – Normal Level  
• Extended qualification beyond AEC-Q101  
• Enhanced electrical testing  
8
• Robust design  
1
Tab  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green product (RoHS compliant)  
• 100% Avalanche tested  
1
8
Type  
Package  
PG-HSOG-8-1  
Marking  
A08S5N11  
IAUS300N08S5N011  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
V GS=10 V, Chip  
limitation1,2)  
V GS=10V, DC  
current3)  
T a=85 °C, V GS=10 V,  
R thJA on 2s2p2,4)  
I D  
Continuous drain current  
410  
300  
52  
A
Pulsed drain current2)  
I D,pulse  
E AS  
I AS  
T C=25 °C, t p= 100 µs  
1505  
817  
300  
±20  
375  
Avalanche energy, single pulse2)  
Avalanche current, single pulse  
Gate source voltage  
I D=150 A  
mJ  
A
-
V GS  
P tot  
-
V
T C=25 °C  
Power dissipation  
W
°C  
T j, T stg  
-
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-
-
-55 ... +175  
55/175/56  
Rev. 1.1  
page 1  
2021-01-26  

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