Datasheet > IAUS240N08S5N019

IAUS240N08S5N019

更新时间： 2024-11-06 14:54:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	382K
描述
车规级MOSFET

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数据手册

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IAUS240N08S5N019 数据手册

IAUS240N08S5N019

OptiMOS™-5 Power-Transistor

Product Summary

V_DS

R_DS(on)

I_D

1.9

240

Features

• N-channel - Enhancement mode

PG-HSOG-8-1

• AEC qualified

Tab

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant)

• Ultra low Rds(on)

Drain

Tab

• 100% Avalanche tested

Gate

pin 1

Type

Package

Marking

PG-HSOG-8-1

A08S5N19

IAUS240N08S5N019

Source

pin 2 - 8

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

T _C=25°C, V_GS=10V¹⁾

I _D

Continuous drain current

240

T _C=100 °C,

V_GS=10 V²⁾

173

Pulsed drain current²⁾

I _D,pulse

E_AS

I _AS

T _C=25 °C

960

400

240

±20

230

Avalanche energy, single pulse²⁾

Avalanche current, single pulse

Gate source voltage

I _D=120 A

V_GS

P_tot

T _C=25 °C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.0

page 1

2018-05-25

12 3 4 5 6 7...9

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