Datasheet > IAUS300N10S5N015T

IAUS300N10S5N015T

更新时间： 2024-11-21 14:56:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	1019K
描述
The IAUS300N10S5N015T is a 1.5 m?, topside-cooled 100 V MOSFET coming in the TOLT package with Infineon’s leading OptiMOS?-5 technology. Next to others the device is designed for 48V applications and is primarily used in the 48V inverter, the HV-LV DC-DC converter as well as other 48V auxiliary applications

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IAUS300N10S5N015T

OptiMOS™-5 Power-Transistor

Product Summary

V_DS

R_DS(on)

I_D

100

1.5

Features

300

• OptiMOS™ power MOSFET for automotive applications

PG-HDSOP-16-2

• N-channel – Enhancement mode – Normal Level

• Extended qualification beyond AEC-Q101

• Enhanced electrical testing

• Robust design

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

IAUS300N10S5N015T

PG-HDSOP-16-2

5N10015

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

V_GS=10 V, Chip

limitation^1,2)

V_GS=10V, DC

current³⁾

T _a=85 °C, V_GS=10 V,

R _thJAon 2s2p^2,4)

I _D

Continuous drain current

350

300

103

Pulsed drain current²⁾

I _D,pulse

E_AS

I _AS

T _C=25 °C, t _p= 100 µs

1272

652

Avalanche energy, single pulse²⁾

Avalanche current, single pulse

Gate source voltage

I _D=150 A

300

V_GS

P_tot

±20

T _C=25 °C

Power dissipation

375

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.0

page 1

2020-10-01

12 3 4 5 6 7...10

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