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IAUS300N10S5N015T PDF预览

IAUS300N10S5N015T

更新时间: 2024-11-06 14:56:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 1019K
描述
The IAUS300N10S5N015T is a 1.5 m?, topside-cooled 100 V MOSFET coming in the TOLT package with Infineon’s leading OptiMOS?-5 technology. Next to others the device is designed for 48V applications and is primarily used in the 48V inverter, the HV-LV DC-DC converter as well as other 48V auxiliary applications

IAUS300N10S5N015T 数据手册

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IAUS300N10S5N015T  
OptiMOS-5 Power-Transistor  
Product Summary  
VDS  
RDS(on)  
ID  
100  
1.5  
V
mW  
A
Features  
300  
• OptiMOS™ power MOSFET for automotive applications  
PG-HDSOP-16-2  
• N-channel – Enhancement mode – Normal Level  
• Extended qualification beyond AEC-Q101  
• Enhanced electrical testing  
• Robust design  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green product (RoHS compliant)  
• 100% Avalanche tested  
Type  
Package  
Marking  
IAUS300N10S5N015T  
PG-HDSOP-16-2  
5N10015  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
VGS=10 V, Chip  
limitation1,2)  
VGS=10V, DC  
current3)  
T a=85 °C, VGS=10 V,  
R thJA on 2s2p2,4)  
I D  
Continuous drain current  
350  
300  
103  
A
Pulsed drain current2)  
I D,pulse  
EAS  
I AS  
T C=25 °C, t p= 100 µs  
1272  
652  
Avalanche energy, single pulse2)  
Avalanche current, single pulse  
Gate source voltage  
I D=150 A  
mJ  
A
-
300  
VGS  
Ptot  
-
±20  
V
T C=25 °C  
Power dissipation  
375  
W
°C  
T j, T stg  
-
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-
-
-55 ... +175  
55/175/56  
Rev. 1.0  
page 1  
2020-10-01  

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