生命周期: | Obsolete | 包装说明: | O-LELF-R2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.70 | 风险等级: | 5.57 |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JESD-30 代码: | O-LELF-R2 | 元件数量: | 1 |
端子数量: | 2 | 最大输出电流: | 0.15 A |
封装主体材料: | GLASS | 封装形状: | ROUND |
封装形式: | LONG FORM | 认证状态: | Not Qualified |
最大反向恢复时间: | 10 µs | 表面贴装: | YES |
端子形式: | WRAP AROUND | 端子位置: | END |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HSK122TR | HITACHI |
获取价格 |
Rectifier Diode, 1 Element, 0.15A, Silicon | |
HSK122TR | RENESAS |
获取价格 |
0.15A, SILICON, SIGNAL DIODE | |
HSK2474I | HSMC |
获取价格 |
N-Channel MOSFETs | |
HSK2474J | HSMC |
获取价格 |
N-Channel MOSFETs | |
HSK277 | HITACHI |
获取价格 |
Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon, LLD, 2 PIN | |
HSK400X | HSMC |
获取价格 |
1.0AMP. SURFACE MOUNT RECTIFIERS | |
HSK4148 | ETC |
获取价格 |
||
HSK83 | HITACHI |
获取价格 |
Silicon Epitaxial Planar Diode for High Voltage Switching | |
HSK83 | RENESAS |
获取价格 |
Silicon Epitaxial Planar Diode for High Voltage Switching | |
HSK83TL | RENESAS |
获取价格 |
0.15A, SILICON, SIGNAL DIODE |