HSK83TR-E

更新时间： 2024-09-24 13:08:23

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HSK83TR-E 技术参数

HSK83

Silicon Epitaxial Planar Diode for High Voltage Switching

REJ03G0191-0400Z

(Previous: ADE-208-169C)

Rev.4.00

Mar.22.2004

Features

•

High reverse voltage. (V_R= 250 V)

LLD package is suitable for high density surface mounting and high speed assembly.

Ordering Information

Type No.

Cathode band

2nd band

Package Code

HSK83

White

Verdure

LLD

Pin Arrangement

Cathode band

2nd. band

Cathode band

1. Cathode

2. Anode

2nd. band

Rev.4.00, Mar.22.2004, page 1 of 4

12 3 4 5

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型号	品牌	获取价格	描述	数据表
HSKE10000/4500-0.4	SEMIKRON	获取价格	Rectifier Diode, Avalanche, 1 Element, 0.5A, 24000V V(RRM), Silicon, HERMETIC SEALED, CERA
HSKE10000/4500-1.2	SEMIKRON	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.3A, 24000V V(RRM), Silicon, HERMETIC SEA
HSKE14000/6300-0.4	SEMIKRON	获取价格	Rectifier Diode, Avalanche, 1 Element, 0.5A, 32000V V(RRM), Silicon, HERMETIC SEALED, CERA
HSKE17000/7600-0.3	SEMIKRON	获取价格	Rectifier Diode, Avalanche, 1 Element, 0.45A, 40000V V(RRM), Silicon, HERMETIC SEALED, CER
HSKE2500/1100-0.3	SEMIKRON	获取价格	Rectifier Diode, Avalanche, 1 Element, 0.45A, 6000V V(RRM), Silicon, HERMETIC SEALED, CERA
HSKE3500/1550-0.3	SEMIKRON	获取价格	Rectifier Diode, Avalanche, 1 Element, 0.4A, 8000V V(RRM), Silicon, HERMETIC SEALED, CERAM
HSKE3500/1550-0.5	SEMIKRON	获取价格	Rectifier Diode, Avalanche, 1 Element, 0.65A, 8000V V(RRM), Silicon, HERMETIC SEALED, CERA
HSKE3500/1550-1.2	SEMIKRON	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 8000V V(RRM), Silicon, HERMETIC SEAL
HSKE3500/1550-2	SEMIKRON	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2.9A, 8000V V(RRM), Silicon, HERMETIC SEAL
HSKE5000/2200-0.25	SEMIKRON	获取价格	Rectifier Diode, Avalanche, 1 Element, 0.35A, 12000V V(RRM), Silicon, HERMETIC SEALED, CER