5秒后页面跳转
HSK2474J PDF预览

HSK2474J

更新时间: 2024-09-23 22:33:39
品牌 Logo 应用领域
HSMC /
页数 文件大小 规格书
5页 54K
描述
N-Channel MOSFETs

HSK2474J 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Base Number Matches:1

HSK2474J 数据手册

 浏览型号HSK2474J的Datasheet PDF文件第2页浏览型号HSK2474J的Datasheet PDF文件第3页浏览型号HSK2474J的Datasheet PDF文件第4页浏览型号HSK2474J的Datasheet PDF文件第5页 
Spec. No. : Preliminary Data  
Issued Date : 1999.11.01  
Revised Date : 200011.01  
Page No. : 1/5  
HI-SINCERITY  
MICROELECTRONICS CORP.  
HSK2474J  
N - Channel MOSFETs  
Description  
Dynamic dv/dt Rating  
Repetitive Avalanche rated  
Surface Mount  
Straigh Lead  
Available in Tape&Reel  
Fast Switching  
Ease of Paralleling  
Features  
Low Drain-Source ON Resistance - RDS(ON)=1.2(Typ.)@ VDS=10V, ID=1.3A  
High Forward Transfer Admittance -|Yfs|=1.2S@VDS=50V, ID=1.3A  
Low Leakage Current - IDSS=100uA (Max.)@VDS=200V  
Enhancement-Mode - Vth = 2.0~4.0V@VDS=4V, ID=250uA  
(Ta=25°C)  
Absolute Maximum Ratings  
Maximum Temperatures  
Storage Temperature............................................................................................ -55 ~ +150 °C  
Junction Temperature .................................................................................................... +150 °C  
Maximum Power Dissipation  
Total Power Dissipation (Tc=25°C) .................................................................................... 25 W  
Maximum Voltages and Currents  
Drain to Source Breakdown Voltage................................................................................. 250 V  
Drain to Gate Breakdown Voltage..................................................................................... 250 V  
Gate to Source Voltage.................................................................................................... ± 20 V  
Drain Current (Cont.) ......................................................................................................... 2.2 A  
Drain Current (Pluse.)........................................................................................................ 8.8 A  
Thermal Characteristics  
Characteristic  
Junction to Case  
Junction to Ambient  
Symbol  
RθJC  
RθJA  
Max.  
5
50  
Units  
°C/W  
°C/W  
HSMC Product Specification  

与HSK2474J相关器件

型号 品牌 获取价格 描述 数据表
HSK277 HITACHI

获取价格

Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon, LLD, 2 PIN
HSK400X HSMC

获取价格

1.0AMP. SURFACE MOUNT RECTIFIERS
HSK4148 ETC

获取价格

HSK83 HITACHI

获取价格

Silicon Epitaxial Planar Diode for High Voltage Switching
HSK83 RENESAS

获取价格

Silicon Epitaxial Planar Diode for High Voltage Switching
HSK83TL RENESAS

获取价格

0.15A, SILICON, SIGNAL DIODE
HSK83TR-E RENESAS

获取价格

0.15A, SILICON, SIGNAL DIODE
HSKE10000/4500-0.4 SEMIKRON

获取价格

Rectifier Diode, Avalanche, 1 Element, 0.5A, 24000V V(RRM), Silicon, HERMETIC SEALED, CERA
HSKE10000/4500-1.2 SEMIKRON

获取价格

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.3A, 24000V V(RRM), Silicon, HERMETIC SEA
HSKE14000/6300-0.4 SEMIKRON

获取价格

Rectifier Diode, Avalanche, 1 Element, 0.5A, 32000V V(RRM), Silicon, HERMETIC SEALED, CERA