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HMP525F7FFP4C-C4D1 PDF预览

HMP525F7FFP4C-C4D1

更新时间: 2024-09-17 18:48:23
品牌 Logo 应用领域
海力士 - HYNIX 时钟动态存储器光电二极管
页数 文件大小 规格书
26页 625K
描述
DRAM, 256MX72, CMOS, PDMA240

HMP525F7FFP4C-C4D1 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:DIMM, DIMM240,40Reach Compliance Code:compliant
风险等级:5.84最大时钟频率 (fCLK):266 MHz
I/O 类型:COMMONJESD-30 代码:R-PDMA-N240
内存密度:19327352832 bit内存宽度:72
端子数量:240字数:268435456 words
字数代码:256000000最高工作温度:95 °C
最低工作温度:组织:256MX72
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:DIMM封装等效代码:DIMM240,40
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
电源:1.5,1.8 V认证状态:Not Qualified
刷新周期:8192子类别:Other Memory ICs
表面贴装:NO技术:CMOS
温度等级:OTHER端子形式:NO LEAD
端子节距:1 mm端子位置:DUAL
Base Number Matches:1

HMP525F7FFP4C-C4D1 数据手册

 浏览型号HMP525F7FFP4C-C4D1的Datasheet PDF文件第2页浏览型号HMP525F7FFP4C-C4D1的Datasheet PDF文件第3页浏览型号HMP525F7FFP4C-C4D1的Datasheet PDF文件第4页浏览型号HMP525F7FFP4C-C4D1的Datasheet PDF文件第5页浏览型号HMP525F7FFP4C-C4D1的Datasheet PDF文件第6页浏览型号HMP525F7FFP4C-C4D1的Datasheet PDF文件第7页 
240pin Fully Buffered DDR2 SDRAM DIMMs based on 512 Mb F-ver.  
This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow  
host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that  
isolates the DDR2 SDRAMs from the channel. This single component located in the front side center of  
each DIMM, acts as a repeater and buffer for all signals and commands which are exchanged between the  
host controller and the DDR2 SDRAMs including data in and output. The AMB communicates with the host  
controller and adjacent DIMMs on a system board using an industry standard Differential Point to Point  
Link Interface at 1.5V power.  
The AMB also allows buffering of memory traffic to support large memory capacities. All memory control  
for the DDR2 SDRAM devices resides in the host, including memory request initiation, timing, refresh,  
scrubbing, sparing, configuration access and power management. The AMB interface is responsible for  
handling channel and memory requests to and from the local FBDIMM and for forwarding request to other  
FBDIMMs on the memory channel.  
FEATURES  
240 pin Fully Buffered ECC dual In-Line DDR2 SDRAM Module  
JEDEC standard Double Data Rate2 Synchronous DRAMs (DDR2 SDRAMs) with 1.8V +/- 0.1V Power Supply  
All inputs and outputs are compatible with SSTL_1.8 interface  
Built with 512Mb DDR2 SDRAMs in 60ball FBGA  
Host interface and AMB component industry standard compliant  
MBIST & IBIST test functions  
4 Bank architecture  
OCD (Off-Chip Driver Impedance Adjustment)  
ODT (On-Die Termination)  
Fully differential clock operations (CK & CK)  
Programmable Burst Length 4 / 8 with both sequential and interleave mode  
Auto refresh and self refresh supported  
8192 refresh cycles / 64ms  
Serial presence detect with EEPROM  
133.35 x 30.35 mm form factor  
RoHS compliant  
Full Module Heat Spreader  
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any  
responsibility for use of circuits described. No patent licenses are implied.  
Rev 1.0 / July 2008  
1

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