HMC413QS16G / 413QS16GE
v04.0505
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
Typical Applications
Features
This amplifier is ideal for use as a power/driver
amplifier for 1.6 - 2.2 GHz applications:
Gain: 23 dB
Saturated Power: +29.5 dBm
42% PAE
• Cellular / PCS / 3G
• Portable & Infrastructure
• Wireless Local Loop
Supply Voltage: +2.75V to +5V
Power Down Capability
Low External Part Count
Included in the HMC-DK002 Designer’s Kit
11
Functional Diagram
General Description
The HMC413QS16G & HMC413QS16GE are high
efficiency GaAs InGaP Heterojunction Bipolar Tran-
sistor (HBT) MMIC Power amplifiers which operate
between 1.6 and 2.2 GHz. The amplifier is packaged
in a low cost, surface mount 16 leaded package with
an exposed base for improved RF and thermal perfor-
mance. With a minimum of external components, the
amplifier provides 23 dB of gain, +29.5 dBm of satu-
rated power at 42% PAE from a +5V supply voltage.
The amplifier can also operate with a 3.6V supply. Vpd
can be used for full power down or RF output power/
current control.
Electrical Specifications, TA = +25° C, As a Function of Vs, Vpd = 3.6V
Vs= 3.6V
Typ.
Vs= 5V
Parameter
Frequency
Units
Min.
Max.
Min.
Typ.
Max.
1.6 - 1.7 GHz
1.7 - 2.0 GHz
2.0 - 2.1 GHz
2.1 - 2.2 GHz
18
19
18
17
21
22
21
20
19
20
19
18
22
23
22
21
dB
dB
dB
dB
Gain
Gain Variation Over Temperature
Input Return Loss
1.6 - 2.2 GHz
1.6 - 2.2 GHz
1.6 - 2.2 GHz
0.025
10
0.035
0.025
10
0.035
dB/°C
dB
Output Return Loss
8
9
dB
1.6 - 1.7 GHz
1.7 - 2.2 GHz
20
21
23
24
23
24
26
27
dBm
dBm
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
1.6 - 1.7 GHz
1.7 - 2.2 GHz
25.5
26.5
28.5
29.5
dBm
dBm
1.6 - 1.7 GHz
1.7 - 2.0 GHz
2.0 - 2.2 GHz
32
33
32
35
36
35
36
37
36
39
40
39
dBm
dBm
dBm
Output Third Order Intercept (IP3)
Noise Figure
1.6 - 2.2 GHz
5.5
5.5
dB
mA
mA
ns
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
Vpd= 0V/3.6V
Vpd= 3.6V
0.002/220
0.002/270
7
7
tON, tOFF
80
80
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