Datasheet > 射频和微波 > 射频/微波放大器> HMC414MS8G

HMC414MS8G

更新时间： 2024-01-10 17:29:35

品牌	Logo	应用领域
HITTITE		放大器射频微波功率放大器
页数	文件大小	规格书
8页	364K
描述
GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

HMC414MS8G 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Transferred	包装说明：	ROHS COMPLIANT, PLASTIC, SMT, 8 PIN
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.08	Is Samacsys：	N
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	17 dB	最大输入功率 (CW)：	17 dBm
JESD-609代码：	e3	最大工作频率：	2800 MHz
最小工作频率：	2200 MHz	最高工作温度：	85 °C
最低工作温度：	-40 °C	射频/微波设备类型：	NARROW BAND MEDIUM POWER
端子面层：	Matte Tin (Sn)	Base Number Matches：	1

HMC414MS8G 数据手册

HMC414MS8G

v02.1202

MICROWAVE CORPORATION

GaAs InGaP HBT MMIC

POWER AMPLIFIER, 2.2 - 2.8 GHz

Typical Applications

Features

This ampliﬁer is ideal for use as a power

ampliﬁer for 2.2 - 2.7 GHz applications:

Gain: 20 dB

Saturated Power: +30 dBm

32% PAE

• BLUETOOTH

• MMDS

Supply Voltage: +2.75V to +5.0 V

Power Down Capability

Low External Part Count

Functional Diagram

General Description

The HMC414MS8G is a high efﬁciency GaAs

InGaP Heterojunction Bipolar Transistor (HBT)

MMIC Power ampliﬁer which operates between

2.2 and 2.8 GHz. The ampliﬁer is packaged in

a low cost, surface mount 8 leaded package with

an exposed base for improved RF and thermal

performance. With a minimum of external com-

ponents, the ampliﬁer provides 20 dB of gain,

+30 dBm of saturated power at 32% PAE from

a +5.0V supply voltage. The ampliﬁer can also

operate with a 3.6V supply. Vpd can be used for

full power down or RF output power/current con-

trol.

Electrical Speciﬁcations,T_A= +25° C, As a Function of Vs, Vpd = 3.6V

Vs = 3.6V

Vs = 5.0V

Parameter

Min.

Typ.

Max.

Min.

Typ.

Max.

Units

GHz

Frequency Range

Gain

2.2 - 2.8

Gain Variation Over Temperature

Input Return Loss

0.03

0.04

0.03

0.04

dB/ °C

Output Return Loss

Output Power for 1 dB Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Noise Figure

dBm

6.5

7.0

Supply Current (Icq)

Vpd = 0V / 3.6V

Vpd = 3.6V

0.002 / 240

0.002 / 300

Control Current (Ipd)

Switching Speed

tON, tOFF

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

8 - 174

12 3 4 5 6 7 8

下载PDF

与HMC414MS8G相关器件

型号	品牌	描述	获取价格	数据表
HMC414MS8G_01	HITTITE	GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz	获取价格
HMC414MS8G_09	HITTITE	GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz	获取价格
HMC414MS8GE	HITTITE	GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz	获取价格
HMC414MS8GTR	HITTITE	暂无描述	获取价格
HMC415	ADI	InGaP HBT功率放大器SMT，4.9 - 5.9 GHz	获取价格
HMC415LP3	HITTITE	GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz	获取价格