Datasheet > HMC413QS16GETR

HMC413QS16GETR

更新时间： 2024-01-02 14:09:53

品牌	Logo	应用领域
亚德诺 - ADI		射频微波
页数	文件大小	规格书
9页	445K
描述
Power Amplifier SMT, 1.6 - 2.2 GHz

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

HMC413QS16GETR 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
Reach Compliance Code：	compliant	风险等级：	5.64
射频/微波设备类型：	NARROW BAND MEDIUM POWER	Base Number Matches：	1

HMC413QS16GETR 数据手册

HMC413QS16G / 413QS16GE

v04.0505

GaAs InGaP HBT MMIC

POWER AMPLIFIER, 1.6 - 2.2 GHz

Typical Applications

Features

This ampliﬁer is ideal for use as a power/driver

ampliﬁer for 1.6 - 2.2 GHz applications:

Gain: 23 dB

Saturated Power: +29.5 dBm

42% PAE

• Cellular / PCS / 3G

• Portable & Infrastructure

• Wireless Local Loop

Supply Voltage: +2.75V to +5V

Power Down Capability

Low External Part Count

Included in the HMC-DK002 Designer’s Kit

Functional Diagram

General Description

The HMC413QS16G & HMC413QS16GE are high

efficiency GaAs InGaP Heterojunction Bipolar Tran-

sistor (HBT) MMIC Power ampliﬁers which operate

between 1.6 and 2.2 GHz. The ampliﬁer is packaged

in a low cost, surface mount 16 leaded package with

an exposed base for improved RF and thermal perfor-

mance. With a minimum of external components, the

ampliﬁer provides 23 dB of gain, +29.5 dBm of satu-

rated power at 42% PAE from a +5V supply voltage.

The ampliﬁer can also operate with a 3.6V supply. Vpd

can be used for full power down or RF output power/

current control.

Electrical Speciﬁcations, T_A= +25° C, As a Function of Vs, Vpd = 3.6V

Vs= 3.6V

Typ.

Vs= 5V

Parameter

Frequency

Units

Min.

Max.

Min.

Typ.

Max.

1.6 - 1.7 GHz

1.7 - 2.0 GHz

2.0 - 2.1 GHz

2.1 - 2.2 GHz

Gain

Gain Variation Over Temperature

Input Return Loss

1.6 - 2.2 GHz

0.025

0.035

0.025

0.035

dB/°C

Output Return Loss

1.6 - 1.7 GHz

1.7 - 2.2 GHz

dBm

Output Power for 1 dB Compression (P1dB)

Saturated Output Power (Psat)

1.6 - 1.7 GHz

1.7 - 2.2 GHz

25.5

26.5

28.5

29.5

dBm

1.6 - 1.7 GHz

1.7 - 2.0 GHz

2.0 - 2.2 GHz

dBm

Output Third Order Intercept (IP3)

Noise Figure

1.6 - 2.2 GHz

5.5

Supply Current (Icq)

Control Current (Ipd)

Switching Speed

Vpd= 0V/3.6V

Vpd= 3.6V

0.002/220

0.002/270

tON, tOFF

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

For price, delivery, and to place orders: Analog Devices, Inc.,

_{responsibility is ass}F_umo_er_{d b}p_yr_Ai_nc_ae_log, _Dd_ee_vicl_eiv_se_forr_iy_ts,_ua_sen_{, n}d_ort_foo_{r a}p_nyla_infc_rine_geo_mer_nd_tse_or_fs_pa,_tep_ntl_se_oa_{r o}s_the_ercontact Hittite Microwave Corporation:

^{rights of third parties th}2^at0^maA^{y r}l^ep^suh^lta^fromRⁱo^tsa^usd^e.,^SC^peh^cife^icalm^tions^sf^so^ubr^jd^ec,^{t t}M^{o c}A^han0^ge1^w8^it2^ho4^{ut no}P^tich^eo^{. N}n^oe: _P^O9_hⁿ7_o^e8_n^T_e-^e_:2^c₇5^h₈ⁿ0₁^o_--₃^l3^o₂^g3₉^y_-4₄^W3₇^a₀^y₀F^,_•^Pa^._O^Ox_r:^._d^B9_e^o_r7^x_o8_n⁹-_l¹_i2_n⁰_e5^6,_a0^N_t-_w^o3^r_w^w3_w7^oo_.3_a^d_n^,_a^M_lo^A_g.⁰_c²_o⁰_m^62-9106

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

11 - 50

Application Support: Phone: 1-800-ANALOG-D

Trademarks and registered trademarks are the property of their respective owners.

Order On-line at www.hittite.com

12 3 4 5 6 7...9

下载PDF

与HMC413QS16GETR相关器件

型号	品牌	描述	获取价格	数据表
HMC413QS16GTR	HITTITE	Narrow Band Medium Power Amplifier,	获取价格
HMC414	ADI	InGaP HBT功率放大器SMT，2.2 - 2.8 GHz	获取价格
HMC414MS8G	HITTITE	GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz	获取价格
HMC414MS8G_01	HITTITE	GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz	获取价格
HMC414MS8G_09	HITTITE	GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz	获取价格
HMC414MS8GE	HITTITE	GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz	获取价格

产品中心

服务支持

精选活动

关于我们

帮助中心

HMC413QS16GETR

HMC413QS16GETR 技术参数

HMC413QS16GETR 数据手册

与HMC413QS16GETR相关器件

与HMC413QS16GETR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HMC413QS16GETR

HMC413QS16GETR 技术参数

HMC413QS16GETR 数据手册

与HMC413QS16GETR相关器件

与HMC413QS16GETR相关文章

您还可以找

您在本页遇到什么问题？