HMC414MS8G
v01.1201
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
Typical Applications
Features
This amplifier is ideal for use as a power
amplifier for 2.2 - 2.7 GHz applications:
Gain: 20 dB
1
Saturated Power: +30 dBm
32% PAE
• BLUETOOTH
• MMDS
Supply Voltage: +2.75V to +5.0 V
Power Down Capability
Low External Part Count
Functional Diagram
General Description
The HMC414MS8G is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT)
MMIC Power amplifier which operates between
2.2 and 2.8 GHz. The amplifier is packaged in
a low cost, surface mount 8 leaded package with
an exposed base for improved RF and thermal
performance. With a minimum of external com-
ponents, the amplifier provides 20 dB of gain,
+30 dBm of saturated power at 32% PAE from
a +5.0V supply voltage. The amplifier can also
operate with a 3.6V supply. Vpd can be used for
full power down or RF output power/current con-
trol.
Electrical Specifications,TA = +25° C, As a Function of Vs, Vpd = 3.6V
Vs= 3.6V
Vs= 5.0V
Parameter
Min.
17
Typ.
Max.
Min.
17
Typ.
Max.
Units
GHz
dB
Frequency Range
Gain
2.2 - 2.8
2.2 - 2.8
20
25
20
25
Gain Variation Over Temperature
Input Return Loss
0.03
0.04
0.03
0.04
dB/ °C
dB
3
8
3
8
Output Return Loss
6
9
6
9
dB
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
21
23
30
25
23
26
35
27
dBm
dBm
dBm
dB
27
30
35
39
6.5
0.002 / 240
7
7.0
0.002 / 300
7
Supply Current (Icc)
Vpd= 0V/3.6V
mA
Control Current (Ipd)
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
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