Datasheet > HMC416LP4_08

HMC416LP4_08

更新时间： 2022-11-07 16:33:02

品牌	Logo	应用领域
HITTITE		缓冲放大器
页数	文件大小	规格书
6页	215K
描述
MMIC VCO w/ BUFFER AMPLIFIER, 2.75 - 3.0 GHz

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HMC416LP4_08 数据手册

HMC416LP4 / 416LP4E

v02.0805

MMIC VCO w/ BUFFER

AMPLIFIER, 2.75 - 3.0 GHz

Typical Applications

Features

Low noise MMIC VCO w/Buffer Ampliﬁer for:

• Wireless Infrastructure

• Industrial Controls

Pout: +4.5 dBm

Phase Noise: -114 dBc/Hz @100 k Hz

No External Resonator Needed

Single Supply: 3V @ 37 mA

QFN Leadless SMT Package, 16 mm²

• Test Equipment

• Military

Functional Diagram

General Description

The HMC416LP4 & HMC416LP4E are GaAs InGaP

Heterojunction Bipolar Transistor (HBT) MMIC VCOs

with integrated resonators, negative resistance

devices, varactor diodes, and buffer ampliﬁers.

Covering 2.75 to 3.0 GHz, the VCO’s phase noise

performance is excellent over temperature, shock,

vibration and process due to the oscillator’s monolithic

structure. Power output is 4.5 dBm typical from a

single supply of 3V @ 37 mA. The voltage controlled

oscillator is packaged in a low cost leadless QFN 4 x 4

mm surface mount package.

Electrical Speciﬁcations, T_A= +25° C, Vcc = +3V

Parameter

Frequency Range

Min.

1.5

Typ.

2.75 - 3.0

4.5

Max.

Units

GHz

dBm

dBc/Hz

Power Output

SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output

Tune Voltage (Vtune)

-114

Supply Current (Icc) (Vcc = +3.0V)

Tune Port Leakage Current

μA

Output Return Loss

Harmonics

2nd

3rd

-5

-16

dBc

Pulling (into a 2.0:1 VSWR)

Pushing @ Vtune= +5V

Frequency Drift Rate

-1

MHz pp

MHz/V

MHz/°C

0.3

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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